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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202202042
|2 doi
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|a pubmed24n1138.xml
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|a (DE-627)NLM341648590
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|a (NLM)35642723
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Li, Nan
|e verfasserin
|4 aut
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|a Diammonium-Mediated Perovskite Film Formation for High-Luminescence Red Perovskite Light-Emitting Diodes
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 27.07.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a 3D mixed-halide perovskite-based red emitters combine excellent charge-transport characteristics with simple solution processing and good film formation; however, light-emitting diodes (LEDs) based on these emitters cannot yet outperform their nanocrystal counterparts. Here the use of diammonium halides in regulating the formation of mixed bromide-iodide perovskite films is explored. It is found that the diammonium cations preferentially bond to Pb-Br, rather than Pb-I, octahedra, promoting the formation of quasi-2D phases. It is proposed that the perovskite formation is initially dominated by the crystallization of the thermodynamically more favorable 3D phase, but, as the solution gets depleted from the regular A cations, thin shells of amorphous quasi-2D perovskites form. This leads to crystalline perovskite grains with efficiently passivated surfaces and reduced lattice strain. As a result, the diammonium-treated perovskite LEDs demonstrate a record luminance (10745 cd m-2 ) and half-lifetime among 3D perovskite-based red LEDs
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|a Journal Article
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|a film formation
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|a high luminance
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|a perovskite light-emitting diodes
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|a stability
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|a Apergi, Sofia
|e verfasserin
|4 aut
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1 |
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|a Chan, Christopher C S
|e verfasserin
|4 aut
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1 |
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|a Jia, Yongheng
|e verfasserin
|4 aut
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1 |
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|a Xie, Fangyan
|e verfasserin
|4 aut
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1 |
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|a Liang, Qiong
|e verfasserin
|4 aut
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|a Li, Gang
|e verfasserin
|4 aut
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|a Wong, Kam Sing
|e verfasserin
|4 aut
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1 |
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|a Brocks, Geert
|e verfasserin
|4 aut
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1 |
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|a Tao, Shuxia
|e verfasserin
|4 aut
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| 700 |
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|a Zhao, Ni
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 30 vom: 15. Juli, Seite e2202042
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:30
|g day:15
|g month:07
|g pages:e2202042
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|u http://dx.doi.org/10.1002/adma.202202042
|3 Volltext
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|d 34
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|h e2202042
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