Carrier-Transport Mechanism in Organic Antiambipolar Transistors Unveiled by Operando Photoemission Electron Microscopy

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 30 vom: 14. Juli, Seite e2201277
1. Verfasser: Hayakawa, Ryoma (VerfasserIn)
Weitere Verfasser: Takeiri, Soichiro, Yamada, Yoichi, Wakayama, Yutaka, Fukumoto, Keiki
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article carrier transport lateral p-n junctions negative differential transconductance organic antiambipolar transistors photoemission electron microscopy
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520 |a Organic antiambipolar transistors (AATs) have partially overlapped p-n junctions. At room temperature, this p-n junction induces a negative differential transconductance in an AAT. However, the detailed carrier-transport mechanism remains unclear. Herein, an operando photoemission electron microscopy is used to tackle this issue owing to the technique's ability to visualize conductive electrons in real time during transistor operation. Notably, it is observed that when the AAT is on, a depletion layer forms at the lateral p-n junction. The visualized depletion layer shows that both p- and n-type channels have pinch-off states in the gate voltage range when the AAT is in on state. The steep potential gradient at the lateral p-n interface enhances the electron conduction from n-type to p-type semiconductor. Another significant finding is that most electrons are considered to recombine with the accumulated holes in the p-type semiconductor, affording the reduction of photoemission intensity by ≈80%. This technique provides a thorough understanding of carrier transport in AATs, further improving the device performance 
650 4 |a Journal Article 
650 4 |a carrier transport 
650 4 |a lateral p-n junctions 
650 4 |a negative differential transconductance 
650 4 |a organic antiambipolar transistors 
650 4 |a photoemission electron microscopy 
700 1 |a Takeiri, Soichiro  |e verfasserin  |4 aut 
700 1 |a Yamada, Yoichi  |e verfasserin  |4 aut 
700 1 |a Wakayama, Yutaka  |e verfasserin  |4 aut 
700 1 |a Fukumoto, Keiki  |e verfasserin  |4 aut 
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