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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202202558
|2 doi
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|a pubmed24n1137.xml
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|a (DE-627)NLM341162167
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|a (NLM)35593489
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Liu, Yi-Xuan
|e verfasserin
|4 aut
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|a Isolated-Oxygen-Vacancy Hardening in Lead-Free Piezoelectrics
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.07.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Defect engineering is a well-established approach to customize the functionalities of perovskite oxides. In demanding high-power applications of piezoelectric materials, acceptor doping serves as the state-of-the-art hardening approach, but inevitably deteriorates the electromechanical properties. Here, a new hardening effect associated with isolated oxygen vacancies for achieving well-balanced performances is proposed. Guided by theoretical design, a well-balanced performance of mechanical quality factor (Qm ) and piezoelectric coefficient (d33 ) is achieved in lead-free potassium sodium niobate ceramics, where Qm increases by over 60% while d33 remains almost unchanged. By atomic-scale Z-contrast imaging, hysteresis measurement, and quantitative piezoresponse force microscopy analysis, it is revealed that the improved Qm results from the inhibition of both extrinsic and intrinsic losses while the unchanged d33 is associated with the polarization contributions being retained. More encouragingly, the hardening effect shows exceptional stability with increasing vibration velocity, offering potential in material design for practical high-power applications such as pharmaceutical extraction and ultrasonic osteotomes
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|a Journal Article
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|a defect engineering
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|a hardening effect
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|a oxygen vacancy
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|a piezoelectric
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|a Qu, Wanbo
|e verfasserin
|4 aut
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|a Thong, Hao-Cheng
|e verfasserin
|4 aut
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|a Zhang, Yang
|e verfasserin
|4 aut
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|a Zhang, Yunfan
|e verfasserin
|4 aut
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|a Yao, Fang-Zhou
|e verfasserin
|4 aut
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|a Nguyen, Trong Nghia
|e verfasserin
|4 aut
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|a Li, Jia-Wang
|e verfasserin
|4 aut
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|a Zhang, Mao-Hua
|e verfasserin
|4 aut
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|a Li, Jing-Feng
|e verfasserin
|4 aut
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|a Han, Bing
|e verfasserin
|4 aut
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|a Gong, Wen
|e verfasserin
|4 aut
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|a Wu, Haijun
|e verfasserin
|4 aut
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|a Wu, Chaofeng
|e verfasserin
|4 aut
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|a Xu, Ben
|e verfasserin
|4 aut
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|a Wang, Ke
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 29 vom: 31. Juli, Seite e2202558
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:29
|g day:31
|g month:07
|g pages:e2202558
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|u http://dx.doi.org/10.1002/adma.202202558
|3 Volltext
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|e 29
|b 31
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