Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase-Change Memory

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 35(2023), 37 vom: 13. Sept., Seite e2201238
1. Verfasser: Sarwat, Syed Ghazi (VerfasserIn)
Weitere Verfasser: Le Gallo, Manuel, Bruce, Robert L, Brew, Kevin, Kersting, Benedikt, Jonnalagadda, Vara Prasad, Ok, Injo, Saulnier, Nicole, BrightSky, Matthew, Sebastian, Abu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2023
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article contacts memristive devices non-idealities phase-change materials
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
Nanoscale resistive memory devices are being explored for neuromorphic and in-memory computing. However, non-ideal device characteristics of read noise and resistance drift pose significant challenges to the achievable computational precision. Here, it is shown that there is an additional non-ideality that can impact computational precision, namely the bias-polarity-dependent current flow. Using phase-change memory (PCM) as a model system, it is shown that this "current-voltage" non-ideality arises both from the material and geometrical properties of the devices. Further, we discuss the detrimental effects of such bipolar asymmetry on in-memory matrix-vector multiply (MVM) operations and provide a scheme to compensate for it
Beschreibung:Date Revised 14.09.2023
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202201238