Stable Universal 1- and 2-Input Single-Molecule Logic Gates

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 26 vom: 11. Juli, Seite e2202135
1. Verfasser: Liu, Ran (VerfasserIn)
Weitere Verfasser: Han, Yingmei, Sun, Feng, Khatri, Gyan, Kwon, Jaesuk, Nickle, Cameron, Wang, Lejia, Wang, Chuan-Kui, Thompson, Damien, Li, Zong-Liang, Nijhuis, Christian A, Del Barco, Enrique
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Coulomb blockade logic gates molecular electronics single-electron transistors single-molecule devices
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520 |a Controllable single-molecule logic operations will enable development of reliable ultra-minimalistic circuit elements for high-density computing but require stable currents from multiple orthogonal inputs in molecular junctions. Utilizing the two unique adjacent conductive molecular orbitals (MOs) of gated Au/S-(CH2 )3 -Fc-(CH2 )9 -S/Au (Fc = ferrocene) single-electron transistors (≈2 nm), a stable single-electron logic calculator (SELC) is presented, which allows real-time modulation of output current as a function of orthogonal input bias (Vb ) and gate (Vg ) voltages. Reliable and low-voltage (ǀVb ǀ ≤ 80 mV, ǀVg ǀ ≤ 2 V) operations of the SELC depend upon the unambiguous association of current resonances with energy shifts of the MOs (which show an invariable, small energy separation of ≈100 meV) in response to the changes of voltages, which is confirmed by electron-transport calculations. Stable multi-logic operations based on the SELC modulated current conversions between the two resonances and Coulomb blockade regimes are demonstrated via the implementation of all universal 1-input (YES/NOT/PASS_1/PASS_0) and 2-input (AND/XOR/OR/NAND/NOR/INT/XNOR) logic gates 
650 4 |a Journal Article 
650 4 |a Coulomb blockade 
650 4 |a logic gates 
650 4 |a molecular electronics 
650 4 |a single-electron transistors 
650 4 |a single-molecule devices 
700 1 |a Han, Yingmei  |e verfasserin  |4 aut 
700 1 |a Sun, Feng  |e verfasserin  |4 aut 
700 1 |a Khatri, Gyan  |e verfasserin  |4 aut 
700 1 |a Kwon, Jaesuk  |e verfasserin  |4 aut 
700 1 |a Nickle, Cameron  |e verfasserin  |4 aut 
700 1 |a Wang, Lejia  |e verfasserin  |4 aut 
700 1 |a Wang, Chuan-Kui  |e verfasserin  |4 aut 
700 1 |a Thompson, Damien  |e verfasserin  |4 aut 
700 1 |a Li, Zong-Liang  |e verfasserin  |4 aut 
700 1 |a Nijhuis, Christian A  |e verfasserin  |4 aut 
700 1 |a Del Barco, Enrique  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 26 vom: 11. Juli, Seite e2202135  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:26  |g day:11  |g month:07  |g pages:e2202135 
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