Progress and Future Prospects of Wide-Bandgap Metal-Compound-Based Passivating Contacts for Silicon Solar Cells

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 26 vom: 20. Juli, Seite e2200344
1. Verfasser: Gao, Kun (VerfasserIn)
Weitere Verfasser: Bi, Qunyu, Wang, Xinyu, Liu, Wenzhu, Xing, Chunfang, Li, Kun, Xu, Dacheng, Su, Zhaojun, Zhang, Cheng, Yu, Jian, Li, Dongdong, Sun, Baoquan, Bullock, James, Zhang, Xiaohong, Yang, Xinbo
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electron-selective contacts hole-selective contacts metal compounds passivating contacts silicon solar cells
Beschreibung
Zusammenfassung:© 2022 Wiley-VCH GmbH.
Advanced doped-silicon-layer-based passivating contacts have boosted the power conversion efficiency (PCE) of single-junction crystalline silicon (c-Si) solar cells to over 26%. However, the inevitable parasitic light absorption of the doped silicon layers impedes further PCE improvement. To this end, alternative passivating contacts based on wide-bandgap metal compounds (so-called dopant-free passivating contacts (DFPCs)) have attracted great attention, thanks to their potential merits in terms of parasitic absorption loss, ease-of-deposition, and cost. Intensive research activity has surrounded this topic with significant progress made in recent years. Various electron-selective and hole-selective contacts based on metal compounds have been successfully developed, and a champion PCE of 23.5% has been achieved for a c-Si solar cell with a MoOx -based hole-selective contact. In this work, the fundamentals and development status of DFPCs are reviewed and the challenges and potential solutions for enhancing the carrier selectivity of DFPCs are discussed. Based on comprehensive and in-depth analysis and simulations, the improvement strategies and future prospects for DFPCs design and device implementation are pointed out. By tuning the carrier concentration of the metal compound and the work function of the capping transparent electrode, high PCEs over 26% can be achieved for c-Si solar cells with DFPCs
Beschreibung:Date Revised 01.07.2022
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202200344