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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202109879
|2 doi
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|a pubmed24n1130.xml
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|a (DE-627)NLM339138491
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|a (NLM)35384082
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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1 |
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|a Zheng, Zhonghao
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Pre-Buried Additive for Cross-Layer Modification in Flexible Perovskite Solar Cells with Efficiency Exceeding 22
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 26.05.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Halide perovskites have shown superior potentials in flexible photovoltaics due to their soft and high power-to-weight nature. However, interfacial residual stress and lattice mismatch due to the large deformation of flexible substrates have greatly limited the performance of flexible perovskite solar cells (F-PSCs). Here, ammonium formate (HCOONH4 ) is used as a pre-buried additive in electron transport layer (ETL) to realize a bottom-up infiltration process for an in situ, integral modification of ETL, perovskite layer, and their interface. The HCOONH4 treatment leads to an enhanced electron extraction in ETL, relaxed residual strain and micro-strain in perovskite film, along with reduced defect densities within these layers. As a result, a top power conversion efficiency of 22.37% and a certified 21.9% on F-PSCs are achieved, representing the highest performance reported so far. This work links the critical connection between multilayer mechanics/defect profiles of ETL-perovskite structure and device performance, thus providing meaningful scientific direction to further narrowing the efficiency gap between F-PSCs and rigid-substrate counterparts
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|a Journal Article
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|a flexible perovskite solar cells
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4 |
|a interfacial adhesion
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4 |
|a mechanical durability
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| 650 |
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4 |
|a pre-buried additives
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| 650 |
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4 |
|a residual stress
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| 700 |
1 |
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|a Li, Faming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gong, Jue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Yinyi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gu, Jinwen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Xiaochun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Shuhan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Mingzhen
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 21 vom: 20. Mai, Seite e2109879
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:21
|g day:20
|g month:05
|g pages:e2109879
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|u http://dx.doi.org/10.1002/adma.202109879
|3 Volltext
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|a AR
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|d 34
|j 2022
|e 21
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|c 05
|h e2109879
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