Light Emission of Self-Trapped Excitons in Inorganic Metal Halides for Optoelectronic Applications
© 2022 Wiley-VCH GmbH.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 52 vom: 10. Dez., Seite e2201008 |
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| Auteur principal: | |
| Autres auteurs: | , , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2022
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article Review high-energy radiation detection inorganic metal halides light-emitting diodes phosphors self-trapped excitons |
| Résumé: | © 2022 Wiley-VCH GmbH. Self-trapped excitons (STEs) have recently attracted tremendous interest due to their broadband emission, high photoluminescence quantum yield, and self-absorption-free properties, which enable a large range of optoelectronic applications such as lighting, displays, radiation detection, and special sensors. Unlike free excitons, the formation of STEs requires strong coupling between excited state excitons and the soft lattice in low electronic dimensional materials. The chemical and structural diversity of metal halides provides an ideal platform for developing efficient STE emission materials. Herein, an overview of recent progress on STE emission materials for optoelectronic applications is presented. The relationships between the fundamental emission mechanisms, chemical compositions, and device performances are systematically reviewed. On this basis, currently existing challenges and possible development opportunities in this field are presented |
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| Description: | Date Completed 29.12.2022 Date Revised 03.01.2023 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202201008 |