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231226s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108396
|2 doi
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|a pubmed24n1127.xml
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|a (DE-627)NLM338372210
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|a (NLM)35306696
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|a DE-627
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|a eng
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| 100 |
1 |
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|a Li, Linyi
|e verfasserin
|4 aut
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| 245 |
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|a The Universal Growth of Ultrathin Perovskite Single Crystals
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 20.05.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Perovskites have engaged significant attention owing to rich species and remarkable physical properties as well as optoelectronic applications. Compared to bulk counterparts, ultrathin perovskites exhibit more available compositions due to the breaking of bulk lattice limitation. Coupled with crystal lattice relaxation and quantum confinement, infinite intriguing properties of ultrathin perovskites deserve to be explored. Developing ultrathin perovskites with alterable composition and structure is a necessity to fully explore this versatile family. Herein, a universal strategy is conceived via constructing oriented solvent microenvironment induced by the interfacial electric field originated from the charge separation between solid and liquid phases, which is conducive to controlling the precursor distribution and makes crystals preferentially nucleate and grow in the preferentially lateral mode. From layered to nonlayered, organic to inorganic, and toxic to low-toxic lead-free perovskite, a full-range synthesis is achieved of ultrathin perovskites. This work opens up opportunities both for ultrathin perovskite exploration through compositional engineering and for device miniaturization in energy conversion applications
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|a Journal Article
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|a oriented solvent microenvironment
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|a single crystals
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|a ultrathin perovskites
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|a universal growth
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|a Yu, Yantao
|e verfasserin
|4 aut
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|a Li, Peng
|e verfasserin
|4 aut
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|a Liu, Jinxin
|e verfasserin
|4 aut
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|a Liang, Lihan
|e verfasserin
|4 aut
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1 |
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|a Wang, Luyang
|e verfasserin
|4 aut
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1 |
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|a Ding, Yu
|e verfasserin
|4 aut
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|a Han, Xiaocang
|e verfasserin
|4 aut
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|a Ji, Jiamin
|e verfasserin
|4 aut
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|a Chen, Shengli
|e verfasserin
|4 aut
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|a Li, Dehui
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Pan
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Shunping
|e verfasserin
|4 aut
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|a Zeng, Mengqi
|e verfasserin
|4 aut
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|a Fu, Lei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 20 vom: 21. Mai, Seite e2108396
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:20
|g day:21
|g month:05
|g pages:e2108396
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|u http://dx.doi.org/10.1002/adma.202108396
|3 Volltext
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