Structural Modularization of Cu2 Te Leading to High Thermoelectric Performance near the Mott-Ioffe-Regel Limit

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 19 vom: 01. Mai, Seite e2108573
1. Verfasser: Zhao, Kunpeng (VerfasserIn)
Weitere Verfasser: Zhu, Chenxi, Zhu, Min, Chen, Hongyi, Lei, Jingdan, Ren, Qingyong, Wei, Tian-Ran, Qiu, Pengfei, Xu, Fangfang, Chen, Lidong, He, Jian, Shi, Xun
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article copper telluride structural modularization the Mott-Ioffe-Regel limit thermoelectric
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520 |a To date, thermoelectric materials research stays focused on optimizing the material's band edge details and disfavors low mobility. Here, the paradigm is shifted from the band edge to the mobility edge, exploring high thermoelectricity near the border of band conduction and hopping. Through coalloying iodine and sulfur, the plain crystal structure is modularized of liquid-like thermoelectric material Cu2 Te with mosaic nanograins and the highly size mismatched S/Te sublattice that chemically quenches the Cu sublattice and drives the electronic states from itinerant to localized. A state-of-the-art figure of merit of 1.4 is obtained at 850 K for Cu2 (S0.4 I0.1 Te0.5 ); and remarkably, it is achieved near the Mott-Ioffe-Regel limit unlike mainstream thermoelectric materials that are band conductors. Broadly, pairing structural modularization with the high performance near the Mott-Ioffe-Regel limit paves an important new path towards the rational design of high-performance thermoelectric materials 
650 4 |a Journal Article 
650 4 |a copper telluride 
650 4 |a structural modularization 
650 4 |a the Mott-Ioffe-Regel limit 
650 4 |a thermoelectric 
700 1 |a Zhu, Chenxi  |e verfasserin  |4 aut 
700 1 |a Zhu, Min  |e verfasserin  |4 aut 
700 1 |a Chen, Hongyi  |e verfasserin  |4 aut 
700 1 |a Lei, Jingdan  |e verfasserin  |4 aut 
700 1 |a Ren, Qingyong  |e verfasserin  |4 aut 
700 1 |a Wei, Tian-Ran  |e verfasserin  |4 aut 
700 1 |a Qiu, Pengfei  |e verfasserin  |4 aut 
700 1 |a Xu, Fangfang  |e verfasserin  |4 aut 
700 1 |a Chen, Lidong  |e verfasserin  |4 aut 
700 1 |a He, Jian  |e verfasserin  |4 aut 
700 1 |a Shi, Xun  |e verfasserin  |4 aut 
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773 1 8 |g volume:34  |g year:2022  |g number:19  |g day:01  |g month:05  |g pages:e2108573 
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