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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202106309
|2 doi
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|a pubmed24n1126.xml
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|a (NLM)35263463
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|a DE-627
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|a eng
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|a Liu, Binbin
|e verfasserin
|4 aut
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|a Electrochemically Exfoliated Chlorine-Doped Graphene for Flexible All-Solid-State Micro-Supercapacitors with High Volumetric Energy Density
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 16.05.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Graphene-constructed micro-supercapacitors (MSCs) have received considerable attention recently, as part of the prospective wearable and portable electronics, owing to their distinctive merits of well-tunable power output, robust mechanical flexibility, and long cyclability. In the current work, the focus is on the fabrication of high-quality and solution-processible chlorine-doped graphene (Cl-G) nanosheets through a handy yet eco-friendly electrochemical exfoliation process. The Cl-G is characteristic of the large lateral size of ≈10 µm, abundant nanopores with sizes of as small as 2 nm, as well as numerous steps from the rugged surface. Arising from the rich chemical functionalities and structure defects, the all-solid-state MSC built by using Cl-G via a facile mask-assisted method delivers a large reversible capacity and ultrasteady charge/discharge performance, with the capacitance being maintained at 98.1% even after 250 000 cycles. The Cl-G-MSC with EMIMBF4 /PVDF-HFP as the electrolyte displays a large volumetric capacitance up to 160 F cm-3 at the scan rate of 5 mV s-1 and high volumetric energy density of 97.9 mW h cm-3 at the power density of 3.4 W cm-3 . The device can also output a high voltage up to 3.5 V and robust capability with 94.8% of capacitance retention upon 10 000 cycles
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|a Journal Article
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|a all-solid-state devices
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|a chlorine-doped graphene
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|a electrochemical exfoliation
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|a high volumetric energy density
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|a micro-supercapacitors
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|a Zhang, Qinghua
|e verfasserin
|4 aut
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|a Zhang, Lina
|e verfasserin
|4 aut
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|a Xu, Caixia
|e verfasserin
|4 aut
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|a Pan, Zhenghui
|e verfasserin
|4 aut
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|a Zhou, Qiuxia
|e verfasserin
|4 aut
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|a Zhou, Weijia
|e verfasserin
|4 aut
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|a Wang, John
|e verfasserin
|4 aut
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|a Gu, Lin
|e verfasserin
|4 aut
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|a Liu, Hong
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 19 vom: 01. Mai, Seite e2106309
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:19
|g day:01
|g month:05
|g pages:e2106309
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|u http://dx.doi.org/10.1002/adma.202106309
|3 Volltext
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