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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202110547
|2 doi
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|a pubmed24n1125.xml
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|a (DE-627)NLM337651310
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|a (NLM)35233858
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Bian, Jinkun
|e verfasserin
|4 aut
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|a Ambipolar Self-Host Functionalization Accelerates Blue Multi-Resonance Thermally Activated Delayed Fluorescence with Internal Quantum Efficiency of 100
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Emerging multi-resonance (MR) thermally activated delayed fluorescence (TADF) emitters can combine 100% exciton harvesting and high color purity for their organic light-emitting diodes (OLED). However, the highly planar configurations of MR molecules lead to intermolecular-interaction-induced quenching. A feasible way is integrating host segments into MR molecules, namely a "self-host" strategy, but without involving additional charge transfer and/or vibrational components to excited states. Herein, an ambipolar self-host featured MR emitter, tCBNDADPO, is demonstrated, whose ambipolar host segment (DADPO) significantly and comprehensively improves the TADF properties, especially greatly accelerated singlet radiative rate constant of 2.11 × 108 s-1 and exponentially reduced nonradiative rate constants. Consequently, at the same time as preserving narrowband blue emission with an FWHM of ≈28 nm at a high doping concentration of 30%, tCBNDADPO reveals state-of-the-art photoluminescence and electroluminescence quantum efficiencies of 99% and 30%, respectively. The corresponding 100% internal quantum efficiency of tCBNDADPO supported by an ultrasimple trilayer and heavily doped device demonstrates the feasibility of the ambipolar self-host strategy for constructing practically applicable MR materials
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|a Journal Article
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|a blue emission
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|a hosts
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|a multiple resonance
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|a organic light-emitting diodes
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|a thermally activated delayed fluorescence
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|a Chen, Su
|e verfasserin
|4 aut
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|a Qiu, Lili
|e verfasserin
|4 aut
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|a Tian, Rundong
|e verfasserin
|4 aut
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1 |
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|a Man, Yi
|e verfasserin
|4 aut
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|a Wang, Yidan
|e verfasserin
|4 aut
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|a Chen, Shuo
|e verfasserin
|4 aut
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|a Zhang, Jing
|e verfasserin
|4 aut
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|a Duan, Chunbo
|e verfasserin
|4 aut
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|a Han, Chunmiao
|e verfasserin
|4 aut
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|a Xu, Hui
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 17 vom: 19. Apr., Seite e2110547
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:17
|g day:19
|g month:04
|g pages:e2110547
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|u http://dx.doi.org/10.1002/adma.202110547
|3 Volltext
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