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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202200626
|2 doi
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|a pubmed24n1125.xml
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|a (DE-627)NLM337624356
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|a (NLM)35231130
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Liu, Zhehong
|e verfasserin
|4 aut
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|a Realization of a Half Metal with a Record-High Curie Temperature in Perovskite Oxides
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Half metals, in which one spin channel is conducting while the other is insulating with an energy gap, are theoretically considered to comprise 100% spin-polarized conducting electrons, and thus have promising applications in high-efficiency magnetic sensors, computer memory, magnetic recording, and so on. However, for practical applications, a high Curie temperature combined with a wide spin energy gap and large magnetization is required. Realizing such a high-performance combination is a key challenge. Herein, a novel A- and B-site ordered quadruple perovskite oxide LaCu3 Fe2 Re2 O12 with the charge format of Cu2+ /Fe3+ /Re4.5+ is reported. The strong Cu2+ (↑)Fe3+ (↑)Re4.5+ (↓) spin interactions lead to a ferrimagnetic Curie temperature as high as 710 K, which is the reported record in perovskite-type half metals thus far. The saturated magnetic moment determined at 300 K is 7.0 μB f.u.-1 and further increases to 8.0 μB f.u.-1 at 2 K. First-principles calculations reveal a half-metallic nature with a spin-down conducting band while a spin-up insulating band with a large energy gap up to 2.27 eV. The currently unprecedented realization of record Curie temperature coupling with the wide energy gap and large moment in LaCu3 Fe2 Re2 O12 opens a way for potential applications in advanced spintronic devices at/above room temperature
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|a Journal Article
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|a half metal
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|a high Curie temperature
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|a high-pressure synthesis
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|a quadruple perovskite oxide
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|a Zhang, Shuaikang
|e verfasserin
|4 aut
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|a Wang, Xiao
|e verfasserin
|4 aut
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|a Ye, Xubin
|e verfasserin
|4 aut
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|a Qin, Shijun
|e verfasserin
|4 aut
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|a Shen, Xudong
|e verfasserin
|4 aut
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|a Lu, Dabiao
|e verfasserin
|4 aut
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|a Dai, Jianhong
|e verfasserin
|4 aut
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|a Cao, Yingying
|e verfasserin
|4 aut
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|a Chen, Kai
|e verfasserin
|4 aut
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|a Radu, Florin
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|4 aut
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|a Wu, Wen-Bin
|e verfasserin
|4 aut
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|a Chen, Chien-Te
|e verfasserin
|4 aut
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|a Francoual, Sonia
|e verfasserin
|4 aut
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|a Mardegan, José R L
|e verfasserin
|4 aut
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|a Leupold, Olaf
|e verfasserin
|4 aut
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|a Tjeng, Liu Hao
|e verfasserin
|4 aut
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|a Hu, Zhiwei
|e verfasserin
|4 aut
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|a Yang, Yi-Feng
|e verfasserin
|4 aut
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|a Long, Youwen
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 17 vom: 01. Apr., Seite e2200626
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:34
|g year:2022
|g number:17
|g day:01
|g month:04
|g pages:e2200626
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|u http://dx.doi.org/10.1002/adma.202200626
|3 Volltext
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|d 34
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|e 17
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