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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.2c00015
|2 doi
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|a pubmed24n1125.xml
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|a (DE-627)NLM337521832
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|a (NLM)35220713
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Li, Tiexin
|e verfasserin
|4 aut
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|a Effect of Electric Fields on Silicon-Based Monolayers
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 08.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Electric fields can induce bond breaking and bond forming, catalyze chemical reactions on surfaces, and change the structure of self-assembled monolayers on electrode surfaces. Here, we study the effect of electric fields supplied either by an electrochemical potential or by conducting atomic force microscopy (C-AFM) on Si-based monolayers. We report that typical monolayers on silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs Ag/AgCl. The monolayer loses 28% of its surface coverage and 55% of its electron transfer rate constant (ket) when +1.5 V electrochemical potential is applied on the Si surface for 10 min. Similarly, a bias voltage of +5 V applied by C-AFM induces complete desorption of the monolayer at specific sites accompanied by an average oxide growth of 2.6 nm when the duration of the bias applied is 8 min. Current-voltage plots progressively change from rectifying, typical of metal-semiconductor junctions, to insulating as the oxide grows. These results define the stability of Si-based organic monolayers toward electric fields and have implication in the design of silicon-based monolayers, molecular electronics devices, and on the interpretation of charge-transfer kinetics across them
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|a Journal Article
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|a Peiris, Chandramalika
|e verfasserin
|4 aut
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|a Dief, Essam M
|e verfasserin
|4 aut
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|a MacGregor, Melanie
|e verfasserin
|4 aut
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|a Ciampi, Simone
|e verfasserin
|4 aut
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|a Darwish, Nadim
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 38(2022), 9 vom: 08. März, Seite 2986-2992
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:38
|g year:2022
|g number:9
|g day:08
|g month:03
|g pages:2986-2992
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|u http://dx.doi.org/10.1021/acs.langmuir.2c00015
|3 Volltext
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|a GBV_USEFLAG_A
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| 912 |
|
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|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_22
|
| 912 |
|
|
|a GBV_ILN_350
|
| 912 |
|
|
|a GBV_ILN_721
|
| 951 |
|
|
|a AR
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| 952 |
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|d 38
|j 2022
|e 9
|b 08
|c 03
|h 2986-2992
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