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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202110583
|2 doi
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|a pubmed24n1124.xml
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|a (DE-627)NLM337495572
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|a (NLM)35218078
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wu, Yingying
|e verfasserin
|4 aut
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| 245 |
1 |
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|a A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 21.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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| 520 |
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|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr2 Ge2 Te6 and Fe3 GeTe2 with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr2 Ge2 Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases
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|a Journal Article
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|a 2D magnetism
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| 650 |
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|a interface coupling
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| 650 |
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|a layered magnets
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| 650 |
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4 |
|a magnetic skyrmions
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| 700 |
1 |
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|a Francisco, Brian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Zhijie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Wei
|e verfasserin
|4 aut
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|a Zhang, Yu
|e verfasserin
|4 aut
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1 |
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|a Wan, Caihua
|e verfasserin
|4 aut
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|a Han, Xiufeng
|e verfasserin
|4 aut
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| 700 |
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|a Chi, Hang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hou, Yasen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lodesani, Alessandro
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yin, Gen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cui, Yong-Tao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Kang L
|e verfasserin
|4 aut
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| 700 |
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|a Moodera, Jagadeesh S
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 16 vom: 30. Apr., Seite e2110583
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:16
|g day:30
|g month:04
|g pages:e2110583
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202110583
|3 Volltext
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|d 34
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