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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.1c03201
|2 doi
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|a pubmed24n1124.xml
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|a (DE-627)NLM337270929
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|a (NLM)35195422
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Wang, Bingdi
|e verfasserin
|4 aut
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|a Synergistic Generation of Radicals by Formic Acid/H2O2/g-C3N4 Nanosheets for Ultra-efficient Oxidative Photodegradation of Rhodamine B
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 15.04.2022
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|a Date Revised 15.04.2022
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|a published: Print-Electronic
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|a Citation Status MEDLINE
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|a Water pollution is a global challenge endangering people's health. In this work, an ultra-efficient photodegradation system of Rhodamine B (RhB) has been established using a graphitic carbon nitride nanosheet (CNNS) as the semiconductor photocatalyst, from which energy is harvested on both the conduction band and valence band by formic acid and hydrogen peroxide, respectively. The optimized FA/H2O2/CNNS system increases the apparent photodegradation rate of RhB by 25 folds, from 0.0198 to 0.4975 min-1. Through a comprehensive investigation with reactive oxygen species scavengers, electron paramagnetic resonance, high-performance liquid chromatography-mass spectrometry, etc., an oxidative mechanism for RhB photodegradation has been proposed, which combines enhanced charge carrier migration and synergistic generation of multiple radicals. Comparable performance improvements have also been observed for similar systems with different semiconductors, suggesting that such a catalytic system could afford a general approach to enhance semiconductor-catalyzed photodegradation
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|a Journal Article
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|a Research Support, Non-U.S. Gov't
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|a Formates
|2 NLM
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|a Rhodamines
|2 NLM
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|a formic acid
|2 NLM
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|a 0YIW783RG1
|2 NLM
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|a Hydrogen Peroxide
|2 NLM
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|a BBX060AN9V
|2 NLM
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| 650 |
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|a rhodamine B
|2 NLM
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| 650 |
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|a K7G5SCF8IL
|2 NLM
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| 700 |
1 |
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|a Wang, Zhida
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bai, Chengkun
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Haoqi
|e verfasserin
|4 aut
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| 700 |
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|a Sun, Hang
|e verfasserin
|4 aut
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| 700 |
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|a Lu, Guolong
|e verfasserin
|4 aut
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| 700 |
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|a Liang, Song
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Zhenning
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 38(2022), 9 vom: 08. März, Seite 2872-2884
|w (DE-627)NLM098181009
|x 1520-5827
|7 nnns
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| 773 |
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|g volume:38
|g year:2022
|g number:9
|g day:08
|g month:03
|g pages:2872-2884
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|u http://dx.doi.org/10.1021/acs.langmuir.1c03201
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