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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202110351
|2 doi
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|a pubmed25n1123.xml
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|a (DE-627)NLM33706475X
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|a (NLM)35174560
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Yu, Zhenhua
|e verfasserin
|4 aut
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|a Gradient Doping in Sn-Pb Perovskites by Barium Ions for Efficient Single-Junction and Tandem Solar Cells
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 21.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Narrow-bandgap (NBG) tin (Sn)-lead (Pb) perovskites generally have a high density of unintentional p-type self-doping, which reduces the charge-carrier lifetimes, diffusion lengths, and device efficiencies. Here, a p-n homojunction across the Sn-Pb perovskite is demonstrated, which results from a gradient doping by barium ions (Ba2+ ). It is reported that 0.1 mol% Ba2+ can effectively compensate the p-doping of Sn-Pb perovskites or even turns it to n-type without changing its bandgap. Ba2+ cations are found to stay at the interstitial sites and work as shallow electron donor. In addition, Ba2+ cations show a unique heterogeneous distribution in perovskite film. Most of the barium ions stay in the top 600 nm region of the perovskite films and turn it into weakly n-type, while the bottom portion of the film remains as p-type. The gradient doping forms a homojunction from top to bottom of the perovskite films with a built-in field that facilitates extraction of photogenerated carriers, resulting in an increased carrier extraction length. This strategy enhances the efficiency of Sn-Pb perovskite single-junction solar cells to over 21.0% and boosts the efficiencies of monolithic perovskite-perovskite tandem solar cells to 25.3% and 24.1%, for active areas of 5.9 mm2 and 0.94 cm2 , respectively
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|a Journal Article
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|a Sn-Pb perovskite solar cells
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|a all-perovskite tandem solar cells
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|a gradient n-doping by barium
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|a homojunctions
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|a ununiform distribution
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|a Chen, Xihan
|e verfasserin
|4 aut
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|a Harvey, Steven P
|e verfasserin
|4 aut
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|a Ni, Zhenyi
|e verfasserin
|4 aut
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|a Chen, Bo
|e verfasserin
|4 aut
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|a Chen, Shangshang
|e verfasserin
|4 aut
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|a Yao, Canglang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiao, Xun
|e verfasserin
|4 aut
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|a Xu, Shuang
|e verfasserin
|4 aut
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|a Yang, Guang
|e verfasserin
|4 aut
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|a Yan, Yanfa
|e verfasserin
|4 aut
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|a Berry, Joseph J
|e verfasserin
|4 aut
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|a Beard, Matthew C
|e verfasserin
|4 aut
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|a Huang, Jinsong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 16 vom: 01. Apr., Seite e2110351
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:34
|g year:2022
|g number:16
|g day:01
|g month:04
|g pages:e2110351
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|u http://dx.doi.org/10.1002/adma.202110351
|3 Volltext
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