|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM336789955 |
| 003 |
DE-627 |
| 005 |
20231225232937.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231225s2022 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.202109491
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1122.xml
|
| 035 |
|
|
|a (DE-627)NLM336789955
|
| 035 |
|
|
|a (NLM)35146811
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Hayakawa, Ryoma
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Electrically Reconfigurable Organic Logic Gates
|b A Promising Perspective on a Dual-Gate Antiambipolar Transistor
|
| 264 |
|
1 |
|c 2022
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 14.04.2022
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
|
| 520 |
|
|
|a Electrically reconfigurable organic logic circuits are promising candidates for realizing new computation architectures, such as artificial intelligence and neuromorphic devices. In this study, multiple logic gate operations are attained based on a dual-gate organic antiambipolar transistor (DG-OAAT). The transistor exhibits a Λ-shaped transfer curve, namely, a negative differential transconductance at room temperature. It is important to note that the peak voltage of the drain current is precisely tuned by three input signals: bottom-gate, top-gate, and drain voltages. This distinctive feature enables multiple logic gate operations with "only a single DG-OAAT," which are not obtainable in conventional transistors. Five logic gate operations, which correspond to AND, OR, NAND, NOR, and XOR, are demonstrated by adjusting the bottom-gate and top-gate voltages. Moreover, varying the drain voltage makes it possible to reversibly switch two logic gates, e.g., NAND/NOR and OR/XOR. In addition, the DG-OAATs show a high degree of stability and reliability. The logic gate operations are observed even months later. The hysteresis in the transfer curves is also negligible. Thus, the device concept is promising for realizing multifunctional logic circuits with a simple transistor configuration. Hence, these findings are expected to surpass the current limitations in complementary metal-oxide-semiconductor devices
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a antiambipolar transistor
|
| 650 |
|
4 |
|a dual-gate organic transistor
|
| 650 |
|
4 |
|a negative differential transconductance
|
| 650 |
|
4 |
|a reconfigurable logic gate
|
| 700 |
1 |
|
|a Honma, Kosuke
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Nakaharai, Shu
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Kanai, Kaname
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wakayama, Yutaka
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 15 vom: 10. Apr., Seite e2109491
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:34
|g year:2022
|g number:15
|g day:10
|g month:04
|g pages:e2109491
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.202109491
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 34
|j 2022
|e 15
|b 10
|c 04
|h e2109491
|