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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108772
|2 doi
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|a pubmed24n1118.xml
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|a (DE-627)NLM335692052
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|a (NLM)35034410
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Liu, Yiqian
|e verfasserin
|4 aut
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|a Phase-Field Simulations of Tunable Polar Topologies in Lead-Free Ferroelectric/Paraelectric Multilayers with Ultrahigh Energy-Storage Performance
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 01.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Dielectric capacitors are emerging energy-storage components that require both high energy-storage density and high efficiency. The conventional approach to energy-storage enhancement is polar nanodomain engineering via chemical modification. Here, a new approach of domain engineering is proposed by exploiting the tunable polar topologies that have been observed recently in ferroelectric/paraelectric multilayer films. Using phase-field simulations, it is demonstrated that vortex, spiral, and in-plane polar structures can be stabilized in BiFeO3 /SrTiO3 (BFO/STO) multilayers by tailoring the strain state and layer thickness. Various switching dynamics are realized in these polar topologies, resulting in relaxor-ferroelectric-, antiferroelectric-, and paraelectric-like polarization behaviors, respectively. Ultrahigh energy-storage densities above 170 J cm-3 and efficiencies above 95% are achievable in STO/BFO/STO trilayers. This strategy should be generally implementable in other multilayer dielectrics and offers a new avenue to enhancing energy storage by tuning the polar topology and thus the polarization characteristics
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|a Journal Article
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|a energy storage
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|a ferroelectric
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|a multilayer
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|a phase-field simulation
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|a polar topology
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1 |
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|a Liu, Junfu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pan, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Xiaoxing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Zijian
|e verfasserin
|4 aut
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| 700 |
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|a Xu, Ben
|e verfasserin
|4 aut
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1 |
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|a Chen, Long-Qing
|e verfasserin
|4 aut
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|a Nan, Ce-Wen
|e verfasserin
|4 aut
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| 700 |
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|a Lin, Yuan-Hua
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 13 vom: 07. Apr., Seite e2108772
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:13
|g day:07
|g month:04
|g pages:e2108772
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|u http://dx.doi.org/10.1002/adma.202108772
|3 Volltext
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