Visible-Blind ZnMgO Colloidal Quantum Dot Downconverters Expand Silicon CMOS Sensors Spectral Coverage into Ultraviolet and Enable UV-Band Discrimination

© 2022 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 10 vom: 15. März, Seite e2109498
1. Verfasser: Saha, Avijit (VerfasserIn)
Weitere Verfasser: Kumar, Gaurav, Pradhan, Santanu, Dash, Gauttam, Viswanatha, Ranjani, Konstantatos, Gerasimos
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article ZnMgO quantum dots band discrimination downconverting films silicon CMOS sensors ultraviolet sensors
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520 |a Selective spectral detection of ultraviolet (UV) radiation is highly important across numerous fields from health and safety to industrial and environmental monitoring applications. Herein, a nontoxic, visible-blind, quantum dot (QD)-based sensing scheme that expands the spectral coverage of silicon complementary metal-oxide-semiconductor (CMOS) sensors into the UV, enabling efficient UV detection without affecting the sensor performance in the visible and UV-band discrimination, is reported. This scheme uses zinc magnesium oxide (ZnMgO) QDs with compositionally tunable absorption across UV and high photoluminescence quantum yield in the visible. The efficient luminescence and large Stokes shift of these QDs are exploited herein to act as an efficient downconverting material that enhances the UV sensitivity of Si-photodetectors (Si-PDs). A Si-PD integrated with the QDs results in a ninefold improvement in photoresponsivity from 0.83 to 7.5 mA W-1 at 260 nm. Leveraging the tunability of these QDs, a simple UV-band identification scheme is further reported, which uses two distinct-bandgap ZnMgO QDs stacked in a tandem architecture whose spectral emission color depends on the UV-band excitation light. The downconverting stack enables facile discrimination of UV light using a standard CMOS image sensor (camera) or by the naked eye and avoids the use of complex optics 
650 4 |a Journal Article 
650 4 |a ZnMgO quantum dots 
650 4 |a band discrimination 
650 4 |a downconverting films 
650 4 |a silicon CMOS sensors 
650 4 |a ultraviolet sensors 
700 1 |a Kumar, Gaurav  |e verfasserin  |4 aut 
700 1 |a Pradhan, Santanu  |e verfasserin  |4 aut 
700 1 |a Dash, Gauttam  |e verfasserin  |4 aut 
700 1 |a Viswanatha, Ranjani  |e verfasserin  |4 aut 
700 1 |a Konstantatos, Gerasimos  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 10 vom: 15. März, Seite e2109498  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:10  |g day:15  |g month:03  |g pages:e2109498 
856 4 0 |u http://dx.doi.org/10.1002/adma.202109498  |3 Volltext 
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