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|a 10.1002/adma.202107798
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|a eng
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|a Wei, Changting
|e verfasserin
|4 aut
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|a A Universal Ternary-Solvent-Ink Strategy toward Efficient Inkjet-Printed Perovskite Quantum Dot Light-Emitting Diodes
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 10.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Toward next-generation electroluminescent quantum dot (QD) displays, inkjet printing technique has been convinced as one of the most promising low-cost and large-scale manufacturing of patterned quantum dot light-emitting diodes (QLEDs). The development of high-quality and stable QD inks is a key step to push this technology toward practical applications. Herein, a universal ternary-solvent-ink strategy is proposed for the cesium lead halides (CsPbX3 ) perovskite QDs and their corresponding inkjet-printed QLEDs. With this tailor-made ternary halogen-free solvent (naphthene, n-tridecane, and n-nonane) recipe, a highly dispersive and stable CsPbX3 QD ink is obtained, which exhibits much better printability and film-forming ability than that of the binary solvent (naphthene and n-tridecane) system, leading to a much better qualitied perovskite QD thin film. Consequently, a record peak external quantum efficiency (EQE) of 8.54% and maximum luminance of 43 883.39 cd m-2 is achieved in inkjet-printed green perovskite QLEDs, which is much higher than that of the binary-solvent-system-based devices (EQE = 2.26%). Moreover, the ternary-solvent-system exhibits a universal applicability in the inkjet-printed red and blue perovskite QLEDs as well as cadmium (Cd)-based QLEDs. This work demonstrates a new strategy for tailor-making a general ternary-solvent-QD-ink system for efficient inkjet-printed QLEDs as well as the other solution-processed electronic devices in the future
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|a Journal Article
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|a ink engineering
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|a inkjet printing
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|a perovskite
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|a quantum dot light-emitting diode
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|a ternary solvent ink
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|a Su, Wenming
|e verfasserin
|4 aut
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|a Li, Jiantong
|e verfasserin
|4 aut
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|a Xu, Bo
|e verfasserin
|4 aut
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|a Shan, Qingsong
|e verfasserin
|4 aut
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|a Wu, Ye
|e verfasserin
|4 aut
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|a Zhang, Fengjuan
|e verfasserin
|4 aut
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|a Luo, Manman
|e verfasserin
|4 aut
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|a Xiang, Hengyang
|e verfasserin
|4 aut
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|a Cui, Zheng
|e verfasserin
|4 aut
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|a Zeng, Haibo
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 10 vom: 21. März, Seite e2107798
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:34
|g year:2022
|g number:10
|g day:21
|g month:03
|g pages:e2107798
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|u http://dx.doi.org/10.1002/adma.202107798
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