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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107850
|2 doi
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|a pubmed25n1114.xml
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|a (DE-627)NLM334306590
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|a (NLM)34894160
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|a DE-627
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|a eng
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|a Du, Tian
|e verfasserin
|4 aut
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|a Additive-Free, Low-Temperature Crystallization of Stable α-FAPbI3 Perovskite
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 03.03.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Formamidinium lead triiodide (FAPbI3 ) is attractive for photovoltaic devices due to its optimal bandgap at around 1.45 eV and improved thermal stability compared with methylammonium-based perovskites. Crystallization of phase-pure α-FAPbI3 conventionally requires high-temperature thermal annealing at 150 °C whilst the obtained α-FAPbI3 is metastable at room temperature. Here, aerosol-assisted crystallization (AAC) is reported, which converts yellow δ-FAPbI3 into black α-FAPbI3 at only 100 °C using precursor solutions containing only lead iodide and formamidinium iodide with no chemical additives. The obtained α-FAPbI3 exhibits remarkably enhanced stability compared to the 150 °C annealed counterparts, in combination with improvements in film crystallinity and photoluminescence yield. Using X-ray diffraction, X-ray scattering, and density functional theory simulation, it is identified that relaxation of residual tensile strains, achieved through the lower annealing temperature and post-crystallization crystal growth during AAC, is the key factor that facilitates the formation of phase-stable α-FAPbI3 . This overcomes the strain-induced lattice expansion that is known to cause the metastability of α-FAPbI3 . Accordingly, pure FAPbI3 p-i-n solar cells are reported, facilitated by the low-temperature (≤100 °C) AAC processing, which demonstrates increases of both power conversion efficiency and operational stability compared to devices fabricated using 150 °C annealed films
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|a Journal Article
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|a additive-free
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|a aerosol-assisted crystallization
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|a formamidinium lead triiodide
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|a stability
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|a strain
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|a Macdonald, Thomas J
|e verfasserin
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|a Yang, Ruo Xi
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|a Li, Meng
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|a Jiang, Zhongyao
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|a Mohan, Lokeshwari
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|a Xu, Weidong
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|a Su, Zhenhuang
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|a Gao, Xingyu
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|a Whiteley, Richard
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|a Lin, Chieh-Ting
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|a Min, Ganghong
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|a Haque, Saif A
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|a Durrant, James R
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|a Persson, Kristin A
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|a McLachlan, Martyn A
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|a Briscoe, Joe
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 9 vom: 01. März, Seite e2107850
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:34
|g year:2022
|g number:9
|g day:01
|g month:03
|g pages:e2107850
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|u http://dx.doi.org/10.1002/adma.202107850
|3 Volltext
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|a GBV_USEFLAG_A
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|a SYSFLAG_A
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| 912 |
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|a GBV_NLM
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| 912 |
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|a GBV_ILN_350
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| 951 |
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|a AR
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|d 34
|j 2022
|e 9
|b 01
|c 03
|h e2107850
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