Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition
Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN deposition time. F...
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Bibliographische Detailangaben
| Veröffentlicht in: | Langmuir : the ACS journal of surfaces and colloids. - 1992. - 37(2021), 50 vom: 21. Dez., Seite 14622-14627
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| 1. Verfasser: |
Mena, Josué
(VerfasserIn) |
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| Weitere Verfasser: |
Carvajal, Joan J,
Zubialevich, Vitaly,
Parbrook, Peter J,
Díaz, Francesc,
Aguiló, Magdalena |
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| Format: | Online-Aufsatz
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| Sprache: | English |
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| Veröffentlicht: |
2021
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| Zugriff auf das übergeordnete Werk: | Langmuir : the ACS journal of surfaces and colloids
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| Schlagworte: | Journal Article |
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