Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide

Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 6 vom: 06. Feb., Seite e2108550
1. Verfasser: Yang, Xiaohui (VerfasserIn)
Weitere Verfasser: Bao, Jin-Ke, Lou, Zhefeng, Li, Peng, Jiang, Chenxi, Wang, Jialu, Sun, Tulai, Liu, Yabin, Guo, Wei, Ramakrishnan, Sitaram, Kotla, Surya Rohith, Tolkiehn, Martin, Paulmann, Carsten, Cao, Guang-Han, Nie, Yuefeng, Li, Wenbin, Liu, Yang, van Smaalen, Sander, Lin, Xiao, Xu, Zhu-An
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article intercalated transition metal dichalcogenides stacking phase transitions superconductivity topological bands
LEADER 01000naa a22002652 4500
001 NLM334081688
003 DE-627
005 20231225222951.0
007 cr uuu---uuuuu
008 231225s2022 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202108550  |2 doi 
028 5 2 |a pubmed24n1113.xml 
035 |a (DE-627)NLM334081688 
035 |a (NLM)34871466 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Yang, Xiaohui  |e verfasserin  |4 aut 
245 1 0 |a Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide 
264 1 |c 2022 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 10.02.2022 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2021 Wiley-VCH GmbH. 
520 |a Intercalation and stacking-order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein, the growth of Pb-intercalated TMDCs-Pb(Ta1+x Se2 )2 , the first 124-phase, is reported. Pb(Ta1+x Se2 )2 exhibits a unique two-step first-order structural phase transition at around 230 K. The transitions are solely associated with the stacking degree of freedom, evolving from a high-temperature (high-T) phase with ABC stacking and R3m symmetry to an intermediate phase with AB stacking and P3m1, and finally to a low-temperature (low-T) phase again with R3msymmetry, but with ACB stacking. Each step involves a rigid slide of building blocks by a vector [1/3, 2/3, 0]. Intriguingly, gigantic lattice contractions occur at the transitions on warming. At low-T, bulk superconductivity with Tc  ≈ 1.8 K is observed. The underlying physics of the structural phase transitions are discussed from first-principle calculations. The symmetry analysis reveals topological nodal lines in the band structure. The results demonstrate the possibility of realizing higher-order metal-intercalated phases of TMDCs and advance the knowledge of polymorphic transitions, and may inspire stacking-order engineering in TMDCs and beyond 
650 4 |a Journal Article 
650 4 |a intercalated transition metal dichalcogenides 
650 4 |a stacking phase transitions 
650 4 |a superconductivity 
650 4 |a topological bands 
700 1 |a Bao, Jin-Ke  |e verfasserin  |4 aut 
700 1 |a Lou, Zhefeng  |e verfasserin  |4 aut 
700 1 |a Li, Peng  |e verfasserin  |4 aut 
700 1 |a Jiang, Chenxi  |e verfasserin  |4 aut 
700 1 |a Wang, Jialu  |e verfasserin  |4 aut 
700 1 |a Sun, Tulai  |e verfasserin  |4 aut 
700 1 |a Liu, Yabin  |e verfasserin  |4 aut 
700 1 |a Guo, Wei  |e verfasserin  |4 aut 
700 1 |a Ramakrishnan, Sitaram  |e verfasserin  |4 aut 
700 1 |a Kotla, Surya Rohith  |e verfasserin  |4 aut 
700 1 |a Tolkiehn, Martin  |e verfasserin  |4 aut 
700 1 |a Paulmann, Carsten  |e verfasserin  |4 aut 
700 1 |a Cao, Guang-Han  |e verfasserin  |4 aut 
700 1 |a Nie, Yuefeng  |e verfasserin  |4 aut 
700 1 |a Li, Wenbin  |e verfasserin  |4 aut 
700 1 |a Liu, Yang  |e verfasserin  |4 aut 
700 1 |a van Smaalen, Sander  |e verfasserin  |4 aut 
700 1 |a Lin, Xiao  |e verfasserin  |4 aut 
700 1 |a Xu, Zhu-An  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 6 vom: 06. Feb., Seite e2108550  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:6  |g day:06  |g month:02  |g pages:e2108550 
856 4 0 |u http://dx.doi.org/10.1002/adma.202108550  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 34  |j 2022  |e 6  |b 06  |c 02  |h e2108550