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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108258
|2 doi
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|a pubmed24n1113.xml
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|a (DE-627)NLM333972082
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|a (NLM)34860446
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Xu, Xiangming
|e verfasserin
|4 aut
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| 245 |
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|a Growth of 2D Materials at the Wafer Scale
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.04.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed
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|a Journal Article
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|a Review
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|a 2D materials
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|a device integration
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|a single crystalline
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|a van der Waal
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|a wafer scale
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|a Guo, Tianchao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Hyunho
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hota, Mrinal K
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Alsaadi, Rajeh S
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lanza, Mario
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xixiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Alshareef, Husam N
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 14 vom: 27. Apr., Seite e2108258
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:14
|g day:27
|g month:04
|g pages:e2108258
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|u http://dx.doi.org/10.1002/adma.202108258
|3 Volltext
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