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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202108615
|2 doi
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|a pubmed24n1113.xml
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|a (DE-627)NLM333967143
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|a (NLM)34859917
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Chen, Ping
|e verfasserin
|4 aut
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|a Anisotropic Carrier Mobility from 2H WSe2
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 17.02.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2022 Wiley-VCH GmbH.
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|a Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe2 is reported, where the anisotropic degree of carrier mobility spans from 0.16 to 0.95 for various WSe2 field-effect transistors under a gate voltage of -60 V. Phonon scattering, impurity ions scattering, and defect scattering are excluded for anisotropic mobility. An intrinsic screening layer is proposed and confirmed by Z-contrast scanning transmission electron microscopy (STEM) imaging to respond to the electrical anisotropy. Seven types of intrinsic screening layers are created and calculated by density functional theory to evaluate the modulated electronic structures, effective masses, and scattering intensities, resulting in anisotropic mobility. The discovery of anisotropic carrier mobility from 2H WSe2 provides a degree of freedom for adjusting the physical properties of 2H TMDCs and fertile ground for exploring and integrating TMDC electronic transistors with better performance along the direction of high mobility
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|a Journal Article
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|a 2H WSe2
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|a anisotropic carrier mobility
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|a defect scattering
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|a electronic structure
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| 650 |
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4 |
|a intrinsic screening layers
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1 |
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|a Pan, Jinbo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Wenchao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wan, Bensong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kong, Xianghua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kaihui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Shixuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ji, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pan, Caofeng
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 7 vom: 27. Feb., Seite e2108615
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:7
|g day:27
|g month:02
|g pages:e2108615
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|u http://dx.doi.org/10.1002/adma.202108615
|3 Volltext
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