Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films

Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films

© 2021 Wiley-VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 4 vom: 01. Jan., Seite e2105190
Auteur principal: Xu, Xiangming (Auteur)
Autres auteurs: Smajic, Jasmin, Li, Kuang-Hui, Min, Jung-Wook, Lei, Yongjiu, Davaasuren, Bambar, He, Xin, Zhang, Xixiang, Ooi, Boon S, Costa, Pedro M F J, Alshareef, Husam N
Format: Article en ligne
Langue:English
Publié: 2022
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 2D materials chemical conversion epitaxy gallium nitride lattice orientation heredity thin films
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520 |a The ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO2 , ZnO, and In2 O3 thin films. Their resultant compounds all inherit the mono-oriented crystal feature from their precursor oxides, including 2D vdW-layered semiconductors (e.g., MoS2 ), metallic films (e.g., MXene-like Mo2 C and MoN), wide-bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In2 S3 ). Using LOH-grown MoN as a seeding layer, mono-oriented GaN is achieved on an amorphous quartz substrate. The LOH process presents a universal strategy capable of growing epitaxial thin films (including 2D vdW-layered materials) not only on single-crystalline but also on noncrystalline substrates 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a chemical conversion 
650 4 |a epitaxy 
650 4 |a gallium nitride 
650 4 |a lattice orientation heredity 
650 4 |a thin films 
700 1 |a Smajic, Jasmin  |e verfasserin  |4 aut 
700 1 |a Li, Kuang-Hui  |e verfasserin  |4 aut 
700 1 |a Min, Jung-Wook  |e verfasserin  |4 aut 
700 1 |a Lei, Yongjiu  |e verfasserin  |4 aut 
700 1 |a Davaasuren, Bambar  |e verfasserin  |4 aut 
700 1 |a He, Xin  |e verfasserin  |4 aut 
700 1 |a Zhang, Xixiang  |e verfasserin  |4 aut 
700 1 |a Ooi, Boon S  |e verfasserin  |4 aut 
700 1 |a Costa, Pedro M F J  |e verfasserin  |4 aut 
700 1 |a Alshareef, Husam N  |e verfasserin  |4 aut 
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773 1 8 |g volume:34  |g year:2022  |g number:4  |g day:01  |g month:01  |g pages:e2105190 
856 4 0 |u http://dx.doi.org/10.1002/adma.202105190  |3 Volltext 
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