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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105190
|2 doi
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|a pubmed24n1109.xml
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|a (DE-627)NLM332997359
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|a DE-627
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|e rakwb
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|a eng
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|a Xu, Xiangming
|e verfasserin
|4 aut
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|a Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 27.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO2 , ZnO, and In2 O3 thin films. Their resultant compounds all inherit the mono-oriented crystal feature from their precursor oxides, including 2D vdW-layered semiconductors (e.g., MoS2 ), metallic films (e.g., MXene-like Mo2 C and MoN), wide-bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In2 S3 ). Using LOH-grown MoN as a seeding layer, mono-oriented GaN is achieved on an amorphous quartz substrate. The LOH process presents a universal strategy capable of growing epitaxial thin films (including 2D vdW-layered materials) not only on single-crystalline but also on noncrystalline substrates
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|a Journal Article
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|a 2D materials
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|a chemical conversion
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|a epitaxy
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|a gallium nitride
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|a lattice orientation heredity
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|a thin films
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|a Smajic, Jasmin
|e verfasserin
|4 aut
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|a Li, Kuang-Hui
|e verfasserin
|4 aut
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|a Min, Jung-Wook
|e verfasserin
|4 aut
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|a Lei, Yongjiu
|e verfasserin
|4 aut
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|a Davaasuren, Bambar
|e verfasserin
|4 aut
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| 700 |
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|a He, Xin
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Xixiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ooi, Boon S
|e verfasserin
|4 aut
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|a Costa, Pedro M F J
|e verfasserin
|4 aut
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|a Alshareef, Husam N
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 4 vom: 01. Jan., Seite e2105190
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:4
|g day:01
|g month:01
|g pages:e2105190
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|u http://dx.doi.org/10.1002/adma.202105190
|3 Volltext
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