Efficient Tandem Quantum-Dot LEDs Enabled by An Inorganic Semiconductor-Metal-Dielectric Interconnecting Layer Stack

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 4 vom: 01. Jan., Seite e2108150
1. Verfasser: Wu, Qianqian (VerfasserIn)
Weitere Verfasser: Gong, Xiwen, Zhao, Dewei, Zhao, Yong-Biao, Cao, Fan, Wang, Haoran, Wang, Sheng, Zhang, Jianhua, Quintero-Bermudez, Rafael, Sargent, Edward H, Yang, Xuyong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article electroluminescence interconnecting layers light-emitting diodes quantum dots tandem structures
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520 |a Light-emitting diodes (LEDs) in a tandem configuration offer a strategy to realize high-performance, multicolor devices. Until now, though, the efficiency of tandem colloidal quantum dot LEDs (QLEDs) has been limited due to unpassivated interfaces and solvent damage originating from the materials processing requirements of interconnecting layers (ICLs). Here an ICL is reported consisting of a semiconductor-metal-dielectric stack that provides facile fabrication, materials stability, and good optoelectronic coupling. It is investigated experimentally how the ICL enables charge balance, suppresses current leakage, and prevents solvent damage to the underlying layers. As a result record efficiencies are reported for double-junction tandem QLEDs, whose emission wavelengths cover from blue to red light; i.e., external quantum efficiencies (EQEs) of 40% (average 37+/-2%) for red, 49% (average 45+/-2%) for yellow, 50% (average 46+/-2%) for green, and 24% (average 21+/-2%) for blue are achieved 
650 4 |a Journal Article 
650 4 |a electroluminescence 
650 4 |a interconnecting layers 
650 4 |a light-emitting diodes 
650 4 |a quantum dots 
650 4 |a tandem structures 
700 1 |a Gong, Xiwen  |e verfasserin  |4 aut 
700 1 |a Zhao, Dewei  |e verfasserin  |4 aut 
700 1 |a Zhao, Yong-Biao  |e verfasserin  |4 aut 
700 1 |a Cao, Fan  |e verfasserin  |4 aut 
700 1 |a Wang, Haoran  |e verfasserin  |4 aut 
700 1 |a Wang, Sheng  |e verfasserin  |4 aut 
700 1 |a Zhang, Jianhua  |e verfasserin  |4 aut 
700 1 |a Quintero-Bermudez, Rafael  |e verfasserin  |4 aut 
700 1 |a Sargent, Edward H  |e verfasserin  |4 aut 
700 1 |a Yang, Xuyong  |e verfasserin  |4 aut 
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773 1 8 |g volume:34  |g year:2022  |g number:4  |g day:01  |g month:01  |g pages:e2108150 
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