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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107316
|2 doi
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|a eng
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|a Zhong, Wenkai
|e verfasserin
|4 aut
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|a Decoupling Complex Multi-Length-Scale Morphology in Non-Fullerene Photovoltaics with Nitrogen K-Edge Resonant Soft X-ray Scattering
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|c 2022
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 10.02.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Complex morphology in organic photovoltaics (OPVs) and other functional soft materials commonly dictates performance. Such complexity in OPVs originates from the mesoscale kinetically trapped non-equilibrium state, which governs device charge generation and transport. Resonant soft X-ray scattering (RSoXS) has been revolutionary in the exploration of OPV morphology in the past decade due to its chemical and orientation sensitivity. However, for non-fullerene OPVs, RSoXS analysis near the carbon K-edge is challenging, due to the chemical similarity of the materials used in active layers. An innovative approach is provided by nitrogen K-edge RSoXS (NK-RSoXS), utilizing the spatial and orientational contrasts from the cyano groups in the acceptor materials, which allows for determination of phase separation. NK-RSoXS clearly visualizes the combined feature sizes in PM6:Y6 blends from crystallization and liquid-liquid demixing, while PM6:Y6:Y6-BO ternary blends with reduced phase-separation size and enhanced material crystallization can lead to current amplification in devices. Nitrogen is common in organic semiconductors and other soft materials, and the strong and directional N 1s → π* resonances make NK-RSoXS a powerful tool to uncover the mesoscale complexity and open opportunities to understand heterogeneous systems
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|a Journal Article
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|a morphology
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|a non-fullerene acceptors
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|a organic photovoltaics
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|a resonant soft X-ray scattering
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|a Zhang, Ming
|e verfasserin
|4 aut
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| 700 |
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|a Freychet, Guillaume
|e verfasserin
|4 aut
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|a Su, Gregory M
|e verfasserin
|4 aut
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|a Ying, Lei
|e verfasserin
|4 aut
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|a Huang, Fei
|e verfasserin
|4 aut
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| 700 |
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|a Cao, Yong
|e verfasserin
|4 aut
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|a Zhang, Yongming
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Cheng
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Feng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 6 vom: 13. Feb., Seite e2107316
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:34
|g year:2022
|g number:6
|g day:13
|g month:02
|g pages:e2107316
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|u http://dx.doi.org/10.1002/adma.202107316
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