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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202107353
|2 doi
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|a pubmed24n1109.xml
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|a (DE-627)NLM332763536
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|a eng
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|a Wang, Tian
|e verfasserin
|4 aut
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|a Anionic Redox Regulated via Metal-Ligand Combinations in Layered Sulfides
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|c 2022
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 27.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The increasing demand for energy storage is calling for improvements in cathode performance. In traditional layered cathodes, the higher energy of the metal 3d over the O 2p orbital results in one-band cationic redox; capacity solely from cations cannot meet the needs for higher energy density. Emerging anionic redox chemistry is promising to access higher capacity. In recent studies, the low-lying O nonbonding 2p orbital was designed to activate one-band oxygen redox, but they are still accompanied by reversibility problems like oxygen loss, irreversible cation migration, and voltage decay. Herein, by regulating the metal-ligand energy level, both extra capacities provided by anionic redox and highly reversible anionic redox process are realized in NaCr1- y Vy S2 system. The simultaneous cationic and anionic redox of Cr/V and S is observed by in situ X-ray absorption near edge structure (XANES). Under high d-p hybridization, the strong covalent interaction stabilizes the holes on the anions, prevents irreversible dimerization and cation migration, and restrains voltage hysteresis and voltage decay. The work provides a fundamental understanding of highly reversible anionic redox in layered compounds, and demonstrates the feasibility of anionic redox chemistry based on hybridized bands with d-p covalence
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|a Journal Article
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|a anionic redox
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|a d-p covalent interactions
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|a energy bands
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|a layered cathodes
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|a metal-ligand combination
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|a Ren, Guo-Xi
|e verfasserin
|4 aut
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|a Xia, He-Yi
|e verfasserin
|4 aut
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|a Shadike, Zulipiya
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Tao-Qing
|e verfasserin
|4 aut
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1 |
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|a Li, Xun-Lu
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Si-Yu
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Ming-Wei
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Pan
|e verfasserin
|4 aut
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|a Gao, Shang-Peng
|e verfasserin
|4 aut
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|a Liu, Xiao-Song
|e verfasserin
|4 aut
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| 700 |
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|a Fu, Zheng-Wen
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 4 vom: 01. Jan., Seite e2107353
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:4
|g day:01
|g month:01
|g pages:e2107353
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|u http://dx.doi.org/10.1002/adma.202107353
|3 Volltext
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|d 34
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