Mechanically Durable Memristor Arrays Based on a Discrete Structure Design

Mechanically Durable Memristor Arrays Based on a Discrete Structure Design

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 4 vom: 01. Jan., Seite e2106212
1. Verfasser: Wang, Ting (VerfasserIn)
Weitere Verfasser: Cui, Zequn, Liu, Yaqing, Lu, Dingjie, Wang, Ming, Wan, Changjin, Leow, Wan Ru, Wang, Changxian, Pan, Liang, Cao, Xun, Huang, Yizhong, Liu, Zhuangjian, Tok, Alfred Iing Yoong, Chen, Xiaodong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article discrete structure mechanical damage endurance memristors stretchable devices
LEADER 01000naa a22002652 4500
001 NLM332763404
003 DE-627
005 20231225220239.0
007 cr uuu---uuuuu
008 231225s2022 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202106212  |2 doi 
028 5 2 |a pubmed24n1109.xml 
035 |a (DE-627)NLM332763404 
035 |a (NLM)34738253 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Wang, Ting  |e verfasserin  |4 aut 
245 1 0 |a Mechanically Durable Memristor Arrays Based on a Discrete Structure Design 
264 1 |c 2022 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 27.01.2022 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2021 Wiley-VCH GmbH. 
520 |a Memristors constitute a promising functional component for information storage and in-memory computing in flexible and stretchable electronics including wearable devices, prosthetics, and soft robotics. Despite tremendous efforts made to adapt conventional rigid memristors to flexible and stretchable scenarios, stretchable and mechanical-damage-endurable memristors, which are critical for maintaining reliable functions under unexpected mechanical attack, have never been achieved. Here, the development of stretchable memristors with mechanical damage endurance based on a discrete structure design is reported. The memristors possess large stretchability (40%) and excellent deformability (half-fold), and retain stable performances under dynamic stretching and releasing. It is shown that the memristors maintain reliable functions and preserve information after extreme mechanical damage, including puncture (up to 100 times) and serious tearing situations (fully diagonally cut). The structural strategy offers new opportunities for next-generation stretchable memristors with mechanical damage endurance, which is vital to achieve reliable functions for flexible and stretchable electronics even in extreme and highly dynamic environments 
650 4 |a Journal Article 
650 4 |a discrete structure 
650 4 |a mechanical damage endurance 
650 4 |a memristors 
650 4 |a stretchable devices 
700 1 |a Cui, Zequn  |e verfasserin  |4 aut 
700 1 |a Liu, Yaqing  |e verfasserin  |4 aut 
700 1 |a Lu, Dingjie  |e verfasserin  |4 aut 
700 1 |a Wang, Ming  |e verfasserin  |4 aut 
700 1 |a Wan, Changjin  |e verfasserin  |4 aut 
700 1 |a Leow, Wan Ru  |e verfasserin  |4 aut 
700 1 |a Wang, Changxian  |e verfasserin  |4 aut 
700 1 |a Pan, Liang  |e verfasserin  |4 aut 
700 1 |a Cao, Xun  |e verfasserin  |4 aut 
700 1 |a Huang, Yizhong  |e verfasserin  |4 aut 
700 1 |a Liu, Zhuangjian  |e verfasserin  |4 aut 
700 1 |a Tok, Alfred Iing Yoong  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaodong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 4 vom: 01. Jan., Seite e2106212  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:4  |g day:01  |g month:01  |g pages:e2106212 
856 4 0 |u http://dx.doi.org/10.1002/adma.202106212  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 34  |j 2022  |e 4  |b 01  |c 01  |h e2106212