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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105977
|2 doi
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|a pubmed24n1107.xml
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Xuliang
|e verfasserin
|4 aut
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|a Homojunction Perovskite Quantum Dot Solar Cells with over 1 µm-Thick Photoactive Layer
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|c 2022
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The solution-processed solar cells based on colloidal quantum dots (QDs) reported so far generally suffer from poor thickness tolerance and it is difficult for them to be compatible with large-scale solution printing technology. However, the recently emerged perovskite QDs, with unique high defect tolerance, are particularly well-suited for efficient photovoltaics. Herein, efficient CsPbI3 perovskite QD solar cells are demonstrated first with over 1 µm-thick active layer by developing an internal P/N homojunction. Specifically, an organic dopant 2,2'-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6TCNNQ) is introduced into CsPbI3 QD arrays to prepare different carrier-type QD arrays. The detailed characterizations reveal successful charge-transfer doping of QDs and carrier-type transformation from n-type to p-type. Subsequently, the P/N homojunction perovskite QD solar cell is assembled using different carrier-type QDs, delivering an enhanced power conversion efficiency of 15.29%. Most importantly, this P/N homojunction strategy realizes remarkable thickness tolerance of QD solar cells, showing a record high efficiency of 12.28% for a 1.2 µm-thick QD active-layer and demonstrating great potential for the future printing manufacturing of QDs solar cells
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|a Journal Article
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|a 1 µm-thick photoactive layer
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|a CsPbI3 quantum dots solar cells
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|a P/N homojunctions
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|a charge-transfer doping
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|a large-scale printing technology
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| 700 |
1 |
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|a Huang, Hehe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ling, Xufeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Jianguo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jiang, Xingyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xue, Di
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Lizhen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chi, Lifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yuan, Jianyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Wanli
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 2 vom: 01. Jan., Seite e2105977
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:34
|g year:2022
|g number:2
|g day:01
|g month:01
|g pages:e2105977
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202105977
|3 Volltext
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