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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105902
|2 doi
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|a pubmed24n1566.xml
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|a eng
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| 100 |
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|a Chen, Aitian
|e verfasserin
|4 aut
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| 245 |
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|a Using Dipole Interaction to Achieve Nonvolatile Voltage Control of Magnetism in Multiferroic Heterostructures
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 13.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Nonvolatile electrical control of magnetism is crucial for developing energy-efficient magnetic memory. Based on strain-mediated magnetoelectric coupling, a multiferroic heterostructure containing an isolated magnet requires nonvolatile strain to achieve this control. However, the magnetization response of an interacting magnet to strain remains elusive. Herein, Co/MgO/CoFeB magnetic tunnel junctions (MTJs) exhibiting dipole interaction on ferroelectric substrates are fabricated. Remarkably, nonvolatile voltage control of the resistance in the MTJs is demonstrated, which originates from the nonvolatile magnetization rotation of an interacting CoFeB magnet driven by volatile voltage-generated strain. Conversely, for an isolated CoFeB magnet, this volatile strain induces volatile control of magnetism. These results reveal that the magnetization response to volatile strain among interacting magnets is different from that among isolated magnets. The findings highlight the role of dipole interaction in multiferroic heterostructures and can stimulate future research on nonvolatile electrical control of magnetism with additional interactions
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|a Journal Article
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|a dipole interactions
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|a magnetic tunnel junctions
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|a multiferroic heterostructures
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4 |
|a nonvolatile voltage control of magnetism
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| 650 |
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4 |
|a strain-mediated magnetoelectric coupling
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1 |
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|a Piao, Hong-Guang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ji, Minhui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fang, Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wen, Yan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Yinchang
|e verfasserin
|4 aut
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| 700 |
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|a Li, Peisen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xi-Xiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 52 vom: 30. Dez., Seite e2105902
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|x 1521-4095
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|g volume:33
|g year:2021
|g number:52
|g day:30
|g month:12
|g pages:e2105902
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|u http://dx.doi.org/10.1002/adma.202105902
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