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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105904
|2 doi
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|a pubmed24n1106.xml
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|a eng
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| 100 |
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|a Wang, Gang
|e verfasserin
|4 aut
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| 245 |
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|a Synergistic Modulation of the Separation of Photo-Generated Carriers via Engineering of Dual Atomic Sites for Promoting Photocatalytic Performance
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.12.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The separation efficiency of photo-generated carriers is still a great challenge that restricts the practical application of photocatalytic technology. The design of spatial separation path for photo-generated carriers at atomic level provides an innovative approach to address this challenge. Herein, a facile dual atomic sites strategy, consisting of Cu-N4 and C-S-C active moieties decorated on polymeric carbon nitride (Cu SAs/p-CNS) is reported to simultaneously achieve the highly efficient separation of photo-generated electrons and holes for boosting photocatalytic performance. As a proof of concept, the Cu SAs/p-CNS is successfully applied to the photo-oxidation of 5-hydroxymethylfurfural (HMF) to 2,5-diformylfuran (DFF), which exhibits 77.1% HMF conversion and 85.6% DFF selectivity under visible light irradiation. The activity is considerably higher than that of bulk p-CN, S doped p-CN, and p-CN supported Cu single atom catalysts. Theoretical calculations and experimental results suggest that, during photocatalytic reaction, the isolated Cu-N4 sites directly capture photo-generated electrons, while the surrounding S atoms bear photo-generated holes, which synergistically facilitates the separation of photo-generated carriers and thus results in enhanced photocatalytic activity. This study provides a new perspective for the rational design of high performance photocatalysts at atomic level
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|a Journal Article
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|a 2,5-diformylfuran
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4 |
|a carbon nitride
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|a charge transfer dynamics
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| 650 |
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|a dual atomic sites
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| 650 |
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4 |
|a single atom catalyst
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| 700 |
1 |
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|a Huang, Rong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Jiangwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Mao, Junjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Dingsheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yadong
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 52 vom: 06. Dez., Seite e2105904
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:52
|g day:06
|g month:12
|g pages:e2105904
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|u http://dx.doi.org/10.1002/adma.202105904
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