Strain-Enabled Phase Transition of Periodic Metasurfaces

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 34(2022), 1 vom: 11. Jan., Seite e2102560
1. Verfasser: Yu, Jiancan (VerfasserIn)
Weitere Verfasser: Liu, Zhihua, Wang, Ming, Wang, Changxian, Chen, Geng, Cui, Zequn, Wang, Ting, Yang, Hui, Wang, Xiaotian, Chen, Xiaodong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2022
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Bravais lattices metasurfaces phase transition strain engineering
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520 |a Phase transitions are universal in solid-state matters, as well as in periodic electromagnetic metasurfaces-the photonic analogues of crystals. Although such transitions dictate the properties of active metasurfaces, universal ways to describe the structure transition of periodic metasurfaces have not yet been established. Here, the authors report the strain-enabled phase transition (or lattice deformation) of stretchable metasurfaces with the crystallographic description. They analytically and experimentally demonstrate the phase transition of plasmonic lattices between two arbitrary 2D Bravais lattices under certain strain configurations. The strain-induced symmetry lowering of the structures gives rise to optical anisotropy upon polarization, namely, linearly and circularly polarized dichroism. They further demonstrate the potential of phase transition in information decoding with applied strain. Interpreting the phase transition of metasurfaces from a standpoint of symmetry would accelerate the discovery of emergent properties, and provide a generalizable approach to designing active metasurfaces 
650 4 |a Journal Article 
650 4 |a Bravais lattices 
650 4 |a metasurfaces 
650 4 |a phase transition 
650 4 |a strain engineering 
700 1 |a Liu, Zhihua  |e verfasserin  |4 aut 
700 1 |a Wang, Ming  |e verfasserin  |4 aut 
700 1 |a Wang, Changxian  |e verfasserin  |4 aut 
700 1 |a Chen, Geng  |e verfasserin  |4 aut 
700 1 |a Cui, Zequn  |e verfasserin  |4 aut 
700 1 |a Wang, Ting  |e verfasserin  |4 aut 
700 1 |a Yang, Hui  |e verfasserin  |4 aut 
700 1 |a Wang, Xiaotian  |e verfasserin  |4 aut 
700 1 |a Chen, Xiaodong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 34(2022), 1 vom: 11. Jan., Seite e2102560  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:34  |g year:2022  |g number:1  |g day:11  |g month:01  |g pages:e2102560 
856 4 0 |u http://dx.doi.org/10.1002/adma.202102560  |3 Volltext 
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