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231225s2022 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202106923
|2 doi
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|a pubmed24n1105.xml
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|a (DE-627)NLM331669897
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|a (NLM)34626038
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|a DE-627
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|a eng
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|a Hou, Xiaohu
|e verfasserin
|4 aut
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|a High-Performance Harsh-Environment-Resistant GaOX Solar-Blind Photodetectors via Defect and Doping Engineering
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|c 2022
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.01.2022
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Gallium oxide (Ga2 O3 ), with an ultrawide bandgap, is currently regarded as one of the most promising materials for solar-blind photodetectors (SBPDs), which are greatly demanded in harsh environment, such as space exploration and flame prewarning. However, realization of high-performance SBPDs with high tolerance toward harsh environments based on low-cost Ga2 O3 material faces great challenges. Here, defect and doping (DD) engineering towards amorphous GaOX (a-GaOX ) has been proposed to obtain ultrasensitive SBPDs for harsh condition application. Serious oxygen deficiency and doping compensation of the engineered a-GaOX film ensure the high response currents and low dark currents, respectively. Annealing item in nitrogen of DD engineering also incurs the recrystallization of material, formation of nanopores by oxygen escape, and suppression of sub-bandgap defect states. As a result, the tailored GaOX SBPD based on DD engineering not only harvests a record-high responsivity rejection ratio (R254 nm /R365 nm ) of 1.8 × 107 , 102 times higher detectivity, and 2 × 102 times faster decay speed than the control device, but also keeps a high responsivity, high photo-to-dark current ratio, and sharp imaging capability even at high temperature (280 °C) or high bias (100 V). The proposed DD engineering provides an effective strategy towards highly harsh-environment-resistant GaOX SBPDs
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|a Journal Article
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|a defect engineering
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|a doping engineering
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|a gallium oxide
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|a recrystallization
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|a solar-blind photodetectors
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|a Zhao, Xiaolong
|e verfasserin
|4 aut
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|a Zhang, Ying
|e verfasserin
|4 aut
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|a Zhang, Zhongfang
|e verfasserin
|4 aut
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|a Liu, Yan
|e verfasserin
|4 aut
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|a Qin, Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Pengju
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Chen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Shunjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ding, Mengfan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Guangwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Qin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Long, Shibing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 34(2022), 1 vom: 13. Jan., Seite e2106923
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:34
|g year:2022
|g number:1
|g day:13
|g month:01
|g pages:e2106923
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|u http://dx.doi.org/10.1002/adma.202106923
|3 Volltext
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