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|a 10.1002/adma.202100704
|2 doi
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|a pubmed24n1104.xml
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|a eng
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|a Gao, Can
|e verfasserin
|4 aut
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|a Application of Triplet-Triplet Annihilation Upconversion in Organic Optoelectronic Devices
|b Advances and Perspectives
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|c 2021
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 10.11.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Organic semiconductor materials have been widely used in various optoelectronic devices due to their rich optical and/or electrical properties, which are highly related to their excited states. Therefore, how to manage and utilize the excited states in organic semiconductors is essential for the realization of high-performance optoelectronic devices. Triplet-triplet annihilation (TTA) upconversion is a unique process of converting two non-emissive triplet excitons to one singlet exciton with higher energy. Efficient optical-to-electrical devices can be realized by harvesting sub-bandgap photons through TTA-based upconversion. In electrical-to-optical devices, triplets generated after the combination of electrons and holes also can be efficiently utilized via TTA, which resulted in a high internal conversion efficiency of 62.5%. Currently, many interesting explorations and significant advances have been demonstrated in these fields. In this review, a comprehensive summary of these intriguing advances on developing efficient TTA upconversion materials and their application in optoelectronic devices is systematically given along with some discussions. Finally, the key challenges and perspectives of TTA upconversion systems for further improvement for optoelectronic devices and other related research directions are provided. This review hopes to provide valuable guidelines for future related research and advancement in organic optoelectronics
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|a Journal Article
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|a Review
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|a efficient triplet exciton utilization
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|a high mobility
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|a organic optoelectronic devices
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|a triplet-triplet annihilation
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|a upconversion
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|a Wong, Wallace W H
|e verfasserin
|4 aut
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|a Qin, Zhengsheng
|e verfasserin
|4 aut
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|a Lo, Shih-Chun
|e verfasserin
|4 aut
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|a Namdas, Ebinazar B
|e verfasserin
|4 aut
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|a Dong, Huanli
|e verfasserin
|4 aut
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|a Hu, Wenping
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 45 vom: 06. Nov., Seite e2100704
|w (DE-627)NLM098206397
|x 1521-4095
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|g volume:33
|g year:2021
|g number:45
|g day:06
|g month:11
|g pages:e2100704
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|u http://dx.doi.org/10.1002/adma.202100704
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