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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202105694
|2 doi
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|a pubmed24n1566.xml
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|a DE-627
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|a eng
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|a Shi, Huanhuan
|e verfasserin
|4 aut
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|a Molecularly Engineered Black Phosphorus Heterostructures with Improved Ambient Stability and Enhanced Charge Carrier Mobility
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Overcoming the intrinsic instability and preserving unique electronic properties are key challenges for the practical applications of black phosphorus (BP) under ambient conditions. Here, it is demonstrated that molecular heterostructures of BP and hexaazatriphenylene derivatives (BP/HATs) enable improved environmental stability and charge transport properties. The strong interfacial coupling and charge transfer between the HATs and the BP lattice decrease the surface electron density and protect BP sheets from oxidation, resulting in an excellent ambient lifetime of up to 21 d. Importantly, HATs increase the charge scattering time of BP, contributing to an improved carrier mobility of 97 cm2 V-1 s-1 , almost three times of the pristine BP films, based on noninvasive THz spectroscopic studies. The film mobility is an order of magnitude larger than previously reported values in exfoliated 2D materials. The strategy opens up new avenues for versatile applications of BP sheets and provides an effective method for tuning the physicochemical properties of other air-sensitive 2D semiconductors
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|a Journal Article
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|a 2D materials
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|a ambient stability
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|a black phosphorus
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|a charge carrier mobility
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|a molecular heterostructures
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|a Fu, Shuai
|e verfasserin
|4 aut
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|a Liu, Yannan
|e verfasserin
|4 aut
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|a Neumann, Christof
|e verfasserin
|4 aut
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|a Wang, Mingchao
|e verfasserin
|4 aut
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|a Dong, Haiyun
|e verfasserin
|4 aut
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|a Kot, Piotr
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|4 aut
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|a Bonn, Mischa
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|4 aut
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|a Wang, Hai I
|e verfasserin
|4 aut
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|a Turchanin, Andrey
|e verfasserin
|4 aut
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|a Schmidt, Oliver G
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|a Shaygan Nia, Ali
|e verfasserin
|4 aut
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|a Yang, Sheng
|e verfasserin
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|a Feng, Xinliang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 48 vom: 30. Dez., Seite e2105694
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:48
|g day:30
|g month:12
|g pages:e2105694
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|u http://dx.doi.org/10.1002/adma.202105694
|3 Volltext
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