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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202103609
|2 doi
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|a pubmed24n1102.xml
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|a (DE-627)NLM330779761
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|a (NLM)34536038
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Giri, Anupam
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Large-Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides
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|c 2021
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 10.11.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr2 Ge2 Te6 , Cr2 Si2 Te6 , Mn3 Si2 Te6 ) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr2 Ge2 Te6 and Cr2 Si2 Te6 , and in-plane direction for Mn3 Si2 Te6 . In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors
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|a Journal Article
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4 |
|a epitaxial growth
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4 |
|a epitaxial self-planarization
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4 |
|a ternary metal chalcogenides
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4 |
|a two-dimensional ferromagnets
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4 |
|a van der Waals magnetic materials
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1 |
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|a De, Chandan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kumar, Manish
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pal, Monalisa
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Hyun Hwi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Jun Sung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheong, Sang-Wook
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jeong, Unyong
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 45 vom: 01. Nov., Seite e2103609
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:45
|g day:01
|g month:11
|g pages:e2103609
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|u http://dx.doi.org/10.1002/adma.202103609
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 33
|j 2021
|e 45
|b 01
|c 11
|h e2103609
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