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|a 10.1002/adma.202103633
|2 doi
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|a pubmed24n1101.xml
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|a (DE-627)NLM330366327
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|a (NLM)34494316
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|a DE-627
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|c DE-627
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|a eng
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|a Hu, Haihua
|e verfasserin
|4 aut
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|a Thermoelectric Cu12 Sb4 S13 -Based Synthetic Minerals with a Sublimation-Derived Porous Network
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|c 2021
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 26.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Pores in a solid can effectively reduce thermal conduction, but they are not favored in thermoelectric materials due to simultaneous deterioration of electrical conductivity. Conceivably, creating a porous structure may endow thermoelectric performance enhancement provided that overwhelming reduction of electrical conductivity can be suppressed. This work demonstrates such an example, in which a porous structure is formed leading to a significant enhancement in the thermoelectric figure of merit (zT). By a unique BiI3 sublimation technique, pore networks can be introduced into tetrahedrite Cu12 Sb4 S13 -based materials, accompanied by changes in their hierarchical structures. The addition of a small quantity of BiI3 (0.7 vol%) results in a ≈72% reduction in the lattice thermal conductivity, whereas the electrical conductivity is improved due to unexpected enhanced carrier mobility. As a result, an enhanced zT of 1.15 at 723 K in porous tetrahedrite and a high conversion efficiency of 6% at ΔT = 419 K in a fabricated segmented single-leg based on this porous material are achieved. This work offers an effective way to concurrently modulate the electrical and thermal properties during the synthesis of high-performance porous thermoelectric materials
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|a Journal Article
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|a BiI3 sublimation
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|a hierarchical structures
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|a porous networks
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|a tetrahedrites
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|a thermoelectric materials
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|a Zhuang, Hua-Lu
|e verfasserin
|4 aut
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|a Jiang, Yilin
|e verfasserin
|4 aut
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|a Shi, Jianlei
|e verfasserin
|4 aut
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|a Li, Jing-Wei
|e verfasserin
|4 aut
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|a Cai, Bowen
|e verfasserin
|4 aut
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|a Han, Zhanran
|e verfasserin
|4 aut
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|a Pei, Jun
|e verfasserin
|4 aut
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|a Su, Bin
|e verfasserin
|4 aut
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|a Ge, Zhen-Hua
|e verfasserin
|4 aut
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|a Zhang, Bo-Ping
|e verfasserin
|4 aut
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|a Li, Jing-Feng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 43 vom: 01. Okt., Seite e2103633
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:43
|g day:01
|g month:10
|g pages:e2103633
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|u http://dx.doi.org/10.1002/adma.202103633
|3 Volltext
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