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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202104769
|2 doi
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|a pubmed25n1100.xml
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|a (DE-627)NLM330286218
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|a (NLM)34486188
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|a DE-627
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|a eng
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|a Chae, Soosang
|e verfasserin
|4 aut
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|a Stretchable Thin Film Mechanical-Strain-Gated Switches and Logic Gate Functions Based on a Soft Tunneling Barrier
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Mechanical-strain-gated switches are cornerstone components of material-embedded circuits that perform logic operations without using conventional electronics. This technology requires a single material system to exhibit three distinct functionalities: strain-invariant conductivity and an increase or decrease of conductivity upon mechanical deformation. Herein, mechanical-strain-gated electric switches based on a thin-film architecture that features an insulator-to-conductor transition when mechanically stretched are demonstrated. The conductivity changes by nine orders of magnitude over a wide range of tunable working strains (as high as 130%). The approach relies on a nanometer-scale sandwiched bilayer Au thin film with an ultrathin poly(dimethylsiloxane) elastomeric barrier layer; applied strain alters the electron tunneling currents through the barrier. Mechanical-force-controlled electric logic circuits are achieved by realizing strain-controlled basic (AND and OR) and universal (NAND and NOR) logic gates in a single system. The proposed material system can be used to fabricate material-embedded logics of arbitrary complexity for a wide range of applications including soft robotics, wearable/implantable electronics, human-machine interfaces, and Internet of Things
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|a Journal Article
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|a logic gates
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|a strain-gated electric switches
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|a stretchable circuits
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|a thin films
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|a tunneling
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|a Choi, Won Jin
|e verfasserin
|4 aut
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|a Fotev, Ivan
|e verfasserin
|4 aut
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| 700 |
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|a Bittrich, Eva
|e verfasserin
|4 aut
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|a Uhlmann, Petra
|e verfasserin
|4 aut
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|a Schubert, Mathias
|e verfasserin
|4 aut
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|a Makarov, Denys
|e verfasserin
|4 aut
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|a Wagner, Jens
|e verfasserin
|4 aut
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|a Pashkin, Alexej
|e verfasserin
|4 aut
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| 700 |
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|a Fery, Andreas
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 41 vom: 06. Okt., Seite e2104769
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:33
|g year:2021
|g number:41
|g day:06
|g month:10
|g pages:e2104769
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|u http://dx.doi.org/10.1002/adma.202104769
|3 Volltext
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