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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202103360
|2 doi
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|a pubmed24n1100.xml
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|a (DE-627)NLM330197290
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|a (NLM)34477241
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Chua, Rebekah
|e verfasserin
|4 aut
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| 245 |
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|a Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The realization of long-range magnetic ordering in 2D systems can potentially revolutionize next-generation information technology. Here, the successful fabrication of crystalline Cr3 Te4 monolayers with room temperature (RT) ferromagnetism is reported. Using molecular beam epitaxy, the growth of 2D Cr3 Te4 films with monolayer thickness is demonstrated at low substrate temperatures (≈100 °C), compatible with Si complementary metal oxide semiconductor technology. X-ray magnetic circular dichroism measurements reveal a Curie temperature (Tc ) of v344 K for the Cr3 Te4 monolayer with an out-of-plane magnetic easy axis, which decreases to v240 K for the thicker film (≈7 nm) with an in-plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3 Te4 /graphite interface, supported by density-functional theory calculations. This work sheds light on the low-temperature scalable growth of 2D nonlayered materials with RT ferromagnetism for new magnetic and spintronic devices
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|a Journal Article
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|a 2D magnets
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|a X-ray magnetic circular dichroism
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|a monolayer chromium telluride
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|a room temperature ferromagnetism
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|a scanning tunneling microscopy
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|a Zhou, Jun
|e verfasserin
|4 aut
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|a Yu, Xiaojiang
|e verfasserin
|4 aut
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|a Yu, Wei
|e verfasserin
|4 aut
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|a Gou, Jian
|e verfasserin
|4 aut
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|a Zhu, Rui
|e verfasserin
|4 aut
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|a Zhang, Lei
|e verfasserin
|4 aut
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|a Liu, Meizhuang
|e verfasserin
|4 aut
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| 700 |
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|a Breese, Mark B H
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Wei
|e verfasserin
|4 aut
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| 700 |
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|a Loh, Kian Ping
|e verfasserin
|4 aut
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| 700 |
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|a Feng, Yuan Ping
|e verfasserin
|4 aut
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|a Yang, Ming
|e verfasserin
|4 aut
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|a Huang, Yu Li
|e verfasserin
|4 aut
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| 700 |
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|a Wee, Andrew T S
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 42 vom: 01. Okt., Seite e2103360
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:42
|g day:01
|g month:10
|g pages:e2103360
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|u http://dx.doi.org/10.1002/adma.202103360
|3 Volltext
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