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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102107
|2 doi
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|a pubmed24n1100.xml
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|a (DE-627)NLM330067052
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|a (NLM)34463975
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|a DE-627
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|a eng
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|a Zhang, Liguo
|e verfasserin
|4 aut
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|a Quantum Oscillations in Ferromagnetic (Sb, V)2 Te3 Topological Insulator Thin Films
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 16.08.2023
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2022 Apr;34(14):e2201542. - PMID 35388927
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a An effective way of manipulating 2D surface states in magnetic topological insulators may open a new route for quantum technologies based on the quantum anomalous Hall effect. The doping-dependent evolution of the electronic band structure in the topological insulator Sb2- x Vx Te3 (0 ≤ x ≤ 0.102) thin films is studied by means of electrical transport. Sb2- x Vx Te3 thin films were prepared by molecular beam epitaxy, and Shubnikov-de Hass (SdH) oscillations are observed in both the longitudinal and transverse transport channels. Doping with the 3d element, vanadium, induces long-range ferromagnetic order with enhanced SdH oscillation amplitudes. The doping effect is systematically studied in various films depending on thickness and bottom gate voltage. The angle-dependence of the SdH oscillations reveals their 2D nature, linking them to topological surface states as their origin. Furthermore, it is shown that vanadium doping can efficiently modify the band structure. The tunability by doping and the coexistence of the surface states with ferromagnetism render Sb2- x Vx Te3 thin films a promising platform for energy band engineering. In this way, topological quantum states may be manipulated to crossover from quantum Hall effect to quantum anomalous Hall effect, which opens an alternative route for the design of quantum electronics and spintronics
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|a Journal Article
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|a Landau fan diagram
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|a ferromagnetic order
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|a magnetically doped topological insulator
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|a molecular beam epitaxy
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|a quantum oscillation
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|a Helm, Toni
|e verfasserin
|4 aut
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|a Lin, Haicheng
|e verfasserin
|4 aut
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|a Fan, Fengren
|e verfasserin
|4 aut
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|a Le, Congcong
|e verfasserin
|4 aut
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|a Sun, Yan
|e verfasserin
|4 aut
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|a Markou, Anastasios
|e verfasserin
|4 aut
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|a Felser, Claudia
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 41 vom: 31. Okt., Seite e2102107
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:41
|g day:31
|g month:10
|g pages:e2102107
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|u http://dx.doi.org/10.1002/adma.202102107
|3 Volltext
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