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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102201
|2 doi
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|a pubmed24n1096.xml
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|a (DE-627)NLM328823597
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|a (NLM)34337802
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Huang, Xiaohe
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly
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|c 2021
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 15.09.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Multibridge channel field-effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next-generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from the decrease in mobility when the thickness of the Si nanosheet is less than 5 nm. In addition, an increase in the leakage current is unavoidable when a large number of channels are stacked. Here, a 2D ultrathin MBCFET is demonstrate, constructed based on 2 nm/2 nm MoS2 channels. The normalized drive current (23.11 µA*µm µm-1 ) in each level channel of this MBCFET exceeds that of the latest seven-level-stacked Si MBCFET, while the leakage current is only 0.4% of this value, with the subthreshold swing reaching 60 mV dec-1 and an on/off ratio reaching up to 4 × 108 at room temperature. Furthermore, the drive current of this 2D ultrathin MBCFET can be further increased by regulating the polarity of the operation voltage to reduce the injection barrier. The combination of 2D materials and an MBC structure has the potential for use in high-performance and low-power-consumption electronics
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|a Journal Article
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|a 2D materials
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|a gate-all-around
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| 650 |
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4 |
|a multibridge channels
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| 650 |
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4 |
|a transistors
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| 700 |
1 |
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|a Liu, Chunsen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Senfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tang, Zhaowu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Shuiyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Xiaozhang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, David Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Peng
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 37 vom: 13. Sept., Seite e2102201
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:37
|g day:13
|g month:09
|g pages:e2102201
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202102201
|3 Volltext
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