Surface Tension of the Oxide Skin of Gallium-Based Liquid Metals

Gallium-based alloys have garnered considerable attention in the scientific community, particularly as they are in an atypical liquid state at and near room temperature. Though physical parameters, such as thermal conductivity, electrical conductivity, viscosity, yield stress, and surface tension, o...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 37(2021), 30 vom: 03. Aug., Seite 9017-9025
1. Verfasser: Handschuh-Wang, Stephan (VerfasserIn)
Weitere Verfasser: Gan, Tiansheng, Wang, Tao, Stadler, Florian J, Zhou, Xuechang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a Gallium-based alloys have garnered considerable attention in the scientific community, particularly as they are in an atypical liquid state at and near room temperature. Though physical parameters, such as thermal conductivity, electrical conductivity, viscosity, yield stress, and surface tension, of these alloys are broadly known, the surface tension (surface free energy) of the oxide skin remains intangible due to the high yield stress of the oxide skin. In this article, we propose to employ gradually attenuated vibrations to obtain equilibrium shapes, which are analyzed along the lines of the puddle height method. The surface tension of the oxide skin was determined on quartz glass and liquid metal-phobic diamond coating to be around 350-365 mN/m, thus independent of the substrate surface or employed liquid metal (i.e., eutectic Ga-In (EGaIn) and galinstan). The similarity of the surface tension for different alloys was ascribed to the composition of the oxide skin, which predominantly comprises gallium oxides due to thermodynamic constraints. We envision that this method can also be applied to other liquid metal alloys and liquid metal marble systems facilitating modeling, simulation, and optimization processes 
650 4 |a Journal Article 
700 1 |a Gan, Tiansheng  |e verfasserin  |4 aut 
700 1 |a Wang, Tao  |e verfasserin  |4 aut 
700 1 |a Stadler, Florian J  |e verfasserin  |4 aut 
700 1 |a Zhou, Xuechang  |e verfasserin  |4 aut 
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