Ultrafast Photoconductivity and Terahertz Vibrational Dynamics in Double-Helix SnIP Nanowires

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 34 vom: 05. Aug., Seite e2100978
1. Verfasser: Purschke, David N (VerfasserIn)
Weitere Verfasser: Pielmeier, Markus R P, Üzer, Ebru, Ott, Claudia, Jensen, Charles, Degg, Annabelle, Vogel, Anna, Amer, Naaman, Nilges, Tom, Hegmann, Frank A
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article double-helix nanowires inorganic semiconductors photoconductivity photophysics terahertz vibrational dynamics ultrafast processes van der Waals materials
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520 |a Tin iodide phosphide (SnIP), an inorganic double-helix material, is a quasi-1D van der Waals semiconductor that shows promise in photocatalysis and flexible electronics. However, the understanding of the fundamental photophysics and charge transport dynamics of this new material is limited. Here, time-resolved terahertz (THz) spectroscopy is used to probe the transient photoconductivity of SnIP nanowire films and measure the carrier mobility. With insight into the highly anisotropic electronic structure from quantum chemical calculations, an electron mobility as high as 280 cm2   V-1 s-1 along the double-helix axis and a hole mobility of 238 cm2   V-1 s-1 perpendicular to the double-helix axis are detected. Additionally, infrared-active (IR-active) THz vibrational modes are measured, which shows excellent agreement with first-principles calculations, and an ultrafast photoexcitation-induced charge redistribution is observed that reduces the amplitude of a twisting mode of the outer SnI helix on picosecond timescales. Finally, it is shown that the carrier lifetime and mobility are limited by a trap density greater than 1018  cm-3 . The results provide insight into the optical excitation and relaxation pathways of SnIP and demonstrate a remarkably high carrier mobility for such a soft and flexible material, suggesting that it could be ideally suited for flexible electronics applications 
650 4 |a Journal Article 
650 4 |a double-helix nanowires 
650 4 |a inorganic semiconductors 
650 4 |a photoconductivity 
650 4 |a photophysics 
650 4 |a terahertz vibrational dynamics 
650 4 |a ultrafast processes 
650 4 |a van der Waals materials 
700 1 |a Pielmeier, Markus R P  |e verfasserin  |4 aut 
700 1 |a Üzer, Ebru  |e verfasserin  |4 aut 
700 1 |a Ott, Claudia  |e verfasserin  |4 aut 
700 1 |a Jensen, Charles  |e verfasserin  |4 aut 
700 1 |a Degg, Annabelle  |e verfasserin  |4 aut 
700 1 |a Vogel, Anna  |e verfasserin  |4 aut 
700 1 |a Amer, Naaman  |e verfasserin  |4 aut 
700 1 |a Nilges, Tom  |e verfasserin  |4 aut 
700 1 |a Hegmann, Frank A  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 33(2021), 34 vom: 05. Aug., Seite e2100978  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:33  |g year:2021  |g number:34  |g day:05  |g month:08  |g pages:e2100978 
856 4 0 |u http://dx.doi.org/10.1002/adma.202100978  |3 Volltext 
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