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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202100994
|2 doi
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|a pubmed25n1093.xml
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Gaviria Rojas, William A
|e verfasserin
|4 aut
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| 245 |
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|a Ohmic-Contact-Gated Carbon Nanotube Transistors for High-Performance Analog Amplifiers
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|c 2021
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 25.08.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The growing demand for ubiquitous data collection has driven the development of sensing technologies with local data processing. As a result, solution-processed semiconductors are widely employed due to their compatibility with low-cost additive manufacturing on a wide range of substrates. However, to fully realize their potential in sensing applications, high-performance scalable analog amplifiers must be realized. Here, ohmic-contact-gated transistors (OCGTs) based on solution-processed semiconducting single-walled carbon nanotubes are introduced to address this unmet need. This new device concept enables output current saturation in the short-channel limit without compromising output current drive. The resulting OCGTs are used in common-source amplifiers to achieve the highest width-normalized output current (≈30 µA µm-1 ) and length-scaled signal gain (≈230 µm-1 ) to date for solution-processed semiconductors. The utility of these amplifiers for emerging sensing technologies is demonstrated by the amplification of complex millivolt-scale analog biological signals including the outputs of electromyography, photoplethysmogram, and accelerometer sensors. Since the OCGT design is compatible with other solution-processed semiconducting materials, this work establishes a general route to high-performance, solution-processed analog electronics
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|a Journal Article
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|a biological sensors
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|a field-effect transistors
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| 650 |
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4 |
|a self-alignment
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| 650 |
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|a short channels
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| 650 |
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4 |
|a solution processing
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| 700 |
1 |
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|a Beck, Megan E
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sangwan, Vinod K
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Silu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hersam, Mark C
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 34 vom: 30. Aug., Seite e2100994
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:34
|g day:30
|g month:08
|g pages:e2100994
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202100994
|3 Volltext
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