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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202102525
|2 doi
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|a pubmed24n1092.xml
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|a (DE-627)NLM327703105
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|a (NLM)34223676
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Lu, Jingdi
|e verfasserin
|4 aut
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| 245 |
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|a Defect-Engineered Dzyaloshinskii-Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO3
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 15.10.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO3 /SrTiO3 (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO3 . This interfacial inversion-symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit-cell-thick SrRuO3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect-engineered topological spin textures may offer an alternate perspective for future skyrmion-based memristor and synaptic devices
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|a Journal Article
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|a Dzyaloshinskii-Moriya interaction
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|a defect-engineering
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|a oxide heterointerfaces
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|a topological magnetism
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|a Si, Liang
|e verfasserin
|4 aut
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|a Zhang, Qinghua
|e verfasserin
|4 aut
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|a Tian, Chengfeng
|e verfasserin
|4 aut
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|a Liu, Xin
|e verfasserin
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|a Song, Chuangye
|e verfasserin
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|a Dong, Shouzhe
|e verfasserin
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|a Wang, Jie
|e verfasserin
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|a Cheng, Sheng
|e verfasserin
|4 aut
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|a Qu, Lili
|e verfasserin
|4 aut
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|a Zhang, Kexuan
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|a Shi, Youguo
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|a Huang, Houbing
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|a Zhu, Tao
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|a Mi, Wenbo
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|a Zhong, Zhicheng
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|a Gu, Lin
|e verfasserin
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|a Held, Karsten
|e verfasserin
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|a Wang, Lingfei
|e verfasserin
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|a Zhang, Jinxing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 33 vom: 06. Aug., Seite e2102525
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:33
|g day:06
|g month:08
|g pages:e2102525
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|u http://dx.doi.org/10.1002/adma.202102525
|3 Volltext
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|d 33
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|e 33
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|h e2102525
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