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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202100272
|2 doi
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|a pubmed24n1090.xml
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|a (DE-627)NLM327130784
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|a (NLM)34165842
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|a DE-627
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|a eng
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|a Xu, Xiaodan
|e verfasserin
|4 aut
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|a Orthorhombic Cobalt Ditelluride with Te Vacancy Defects Anchoring on Elastic MXene Enables Efficient Potassium-Ion Storage
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|c 2021
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 05.08.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The fast and reversible potassiation/depotassiation of anode materials remains an elusive yet intriguing goal. Herein, a class of the P-doping-induced orthorhombic CoTe2 nanowires with Te vacancy defects supported on MXene (o-P-CoTe2 /MXene) is designed and prepared, taking advantage of the synergistic effects of the conductive o-P-CoTe2 arrays with rich Te vacancy defects and the elastic MXene sheets with self-autoadjustable function. Consequently, the o-P-CoTe2 /MXene superstructure exhibits boosted potassium-storage performance, in terms of high reversible capacity (373.7 mAh g-1 at 0.2 A g-1 after 200 cycles), remarkable rate capability (168.2 mAh g-1 at 20 A g-1 ), and outstanding long-term cyclability (0.011% capacity decay per cycle over 2000 cycles at 2 A g-1 ), representing the best performance in transition-metal-dichalcogenides-based anodes to date. Impressively, the flexible full battery with o-P-CoTe2 /MXene anode achieves a satisfying energy density of 275 Wh kg-1 and high bending stability. The kinetics analysis and first-principles calculations reveal superior pseudocapacitive property, high electronic conductivity, and favorable K+ ion adsorption and diffusion capability, corroborating fast K+ ion storage. Especially, ex situ characterizations confirm o-P-CoTe2 /MXene undergoes reversible evolutions of initially proceeding with the K+ ion insertion, followed by the conversion reaction mechanism
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|a Journal Article
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|a MXenes
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|a P doping
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|a Te vacancies
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|a cobalt ditelluride
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|a potassium-ion batteries
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|a Zhang, Yelong
|e verfasserin
|4 aut
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|a Sun, Hongyang
|e verfasserin
|4 aut
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|a Zhou, Jianwen
|e verfasserin
|4 aut
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|a Liu, Zheng
|e verfasserin
|4 aut
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|a Qiu, Zhenping
|e verfasserin
|4 aut
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|a Wang, Da
|e verfasserin
|4 aut
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|a Yang, Chao
|e verfasserin
|4 aut
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|a Zeng, Qingguang
|e verfasserin
|4 aut
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|a Peng, Zhangquan
|e verfasserin
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|a Guo, Shaojun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 31 vom: 16. Aug., Seite e2100272
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:31
|g day:16
|g month:08
|g pages:e2100272
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|u http://dx.doi.org/10.1002/adma.202100272
|3 Volltext
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