Room-Temperature Magnetic Field Effect on Excitonic Photoluminescence in Perovskite Nanocrystals

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 30 vom: 16. Juli, Seite e2008225
1. Verfasser: Zhang, Kun (VerfasserIn)
Weitere Verfasser: Zhao, Jian, Hu, Qingsong, Yang, Sijie, Zhu, Xixiang, Zhang, Yaqi, Huang, Ruiqin, Ma, Yongfu, Wang, Zhenxing, Ouyang, Zhongwen, Han, Junbo, Han, Yibo, Tang, Jiang, Tong, Wei, Zhang, Lei, Zhai, Tianyou
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article excitons magnetic field effect orbital ordering perovskites photoluminescence
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520 |a Magnetic-field-enhanced spin-polarized electronic/optical properties in semiconductors are crucial for fabricating various spintronic devices. However, this spin polarization is governed by weak spin exchange interactions and easily randomized by thermal fluctuations; therefore, it is only produced at cryogenic temperatures, which severely limits the applications. Herein, a room-temperature intrinsic magnetic field effect (MFE) on excitonic photoluminescence is achieved in CsPbX3 :Mn (X = Cl, Br) perovskite nanocrystals. Through moderate Mn doping, the MFE is enhanced by exciton-Mn interactions, and through partial Br substitution, the MFE is stabilized at room temperature by exciton orbital ordering. The orbital ordering significantly enhances the g-factor difference between electrons and holes, which is evidenced by a parallel orbit-orbit interaction among excitons generated by circular polarized laser excitation. This study provides a clear avenue for engineering spintronic materials based on orbital interactions in perovskites 
650 4 |a Journal Article 
650 4 |a excitons 
650 4 |a magnetic field effect 
650 4 |a orbital ordering 
650 4 |a perovskites 
650 4 |a photoluminescence 
700 1 |a Zhao, Jian  |e verfasserin  |4 aut 
700 1 |a Hu, Qingsong  |e verfasserin  |4 aut 
700 1 |a Yang, Sijie  |e verfasserin  |4 aut 
700 1 |a Zhu, Xixiang  |e verfasserin  |4 aut 
700 1 |a Zhang, Yaqi  |e verfasserin  |4 aut 
700 1 |a Huang, Ruiqin  |e verfasserin  |4 aut 
700 1 |a Ma, Yongfu  |e verfasserin  |4 aut 
700 1 |a Wang, Zhenxing  |e verfasserin  |4 aut 
700 1 |a Ouyang, Zhongwen  |e verfasserin  |4 aut 
700 1 |a Han, Junbo  |e verfasserin  |4 aut 
700 1 |a Han, Yibo  |e verfasserin  |4 aut 
700 1 |a Tang, Jiang  |e verfasserin  |4 aut 
700 1 |a Tong, Wei  |e verfasserin  |4 aut 
700 1 |a Zhang, Lei  |e verfasserin  |4 aut 
700 1 |a Zhai, Tianyou  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 33(2021), 30 vom: 16. Juli, Seite e2008225  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:33  |g year:2021  |g number:30  |g day:16  |g month:07  |g pages:e2008225 
856 4 0 |u http://dx.doi.org/10.1002/adma.202008225  |3 Volltext 
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