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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202008225
|2 doi
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|a pubmed25n1088.xml
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|a (DE-627)NLM32662225X
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|a (NLM)34114270
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Kun
|e verfasserin
|4 aut
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|a Room-Temperature Magnetic Field Effect on Excitonic Photoluminescence in Perovskite Nanocrystals
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 28.07.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Magnetic-field-enhanced spin-polarized electronic/optical properties in semiconductors are crucial for fabricating various spintronic devices. However, this spin polarization is governed by weak spin exchange interactions and easily randomized by thermal fluctuations; therefore, it is only produced at cryogenic temperatures, which severely limits the applications. Herein, a room-temperature intrinsic magnetic field effect (MFE) on excitonic photoluminescence is achieved in CsPbX3 :Mn (X = Cl, Br) perovskite nanocrystals. Through moderate Mn doping, the MFE is enhanced by exciton-Mn interactions, and through partial Br substitution, the MFE is stabilized at room temperature by exciton orbital ordering. The orbital ordering significantly enhances the g-factor difference between electrons and holes, which is evidenced by a parallel orbit-orbit interaction among excitons generated by circular polarized laser excitation. This study provides a clear avenue for engineering spintronic materials based on orbital interactions in perovskites
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|a Journal Article
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|a excitons
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|a magnetic field effect
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|a orbital ordering
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|a perovskites
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|a photoluminescence
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|a Zhao, Jian
|e verfasserin
|4 aut
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|a Hu, Qingsong
|e verfasserin
|4 aut
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|a Yang, Sijie
|e verfasserin
|4 aut
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|a Zhu, Xixiang
|e verfasserin
|4 aut
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|a Zhang, Yaqi
|e verfasserin
|4 aut
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|a Huang, Ruiqin
|e verfasserin
|4 aut
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|a Ma, Yongfu
|e verfasserin
|4 aut
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|a Wang, Zhenxing
|e verfasserin
|4 aut
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|a Ouyang, Zhongwen
|e verfasserin
|4 aut
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|a Han, Junbo
|e verfasserin
|4 aut
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|a Han, Yibo
|e verfasserin
|4 aut
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|a Tang, Jiang
|e verfasserin
|4 aut
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|a Tong, Wei
|e verfasserin
|4 aut
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|a Zhang, Lei
|e verfasserin
|4 aut
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 30 vom: 16. Juli, Seite e2008225
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:33
|g year:2021
|g number:30
|g day:16
|g month:07
|g pages:e2008225
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|u http://dx.doi.org/10.1002/adma.202008225
|3 Volltext
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